# US 11,999,888 B2 · Method for in-situ modification of mercury quantum dots in traditional thermal injection process

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- Number: US 11,999,888 B2
- Document ID: US11999888B2
- Status: Granted
- Kind: B2
- Application number: 18/053,790
- Filed: 2022-11-09
- Published: 2023-06-08
- Granted: 2024-06-04
- Earliest claimed: 2022-11-09
- Assignees: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Applicants: Shanghai Institute of Technical Physics Chinese Academy of Sciences
- Inventors: Jingjing Liu; Jianlu Wang; Tianle Guo; Xinning Huang; Xiangjian Meng; Hong Shen; Tie Lin; Junhao Chu
- Web page: https://patentgrep.com/patent/US11999888B2

## CPC

- C09K 11/892: {Chalcogenides}
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- B82Y 40/00: Manufacture or treatment of nanostructures
- C09K 11/025: {non-luminescent particle coatings or suspension media}
- C09K 11/883: {with zinc or cadmium}
- H10K 30/10: comprising heterojunctions between organic semiconductors and inorganic semiconductors
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

The present disclosure relates to the field of preparation of compound semiconductor nanomaterials, and in particular to a method for in-situ modification of mercury quantum dots in a traditional thermal injection process. It is characterized in that, in the traditional thermal injection process for synthesis of HgTe quantum dots, after a certain reaction time, a low boiling point polar solvent that is incompatible with a reaction solvent is rapidly injected, so that an interfacial separation of two liquid phases occurs in a mixed reaction, and then a selective crystal oriented surface modification is conducted on surfaces of mercury quantum dots.

## Claims

### Claim 1

A method for in-situ modification of mercury quantum dots in a traditional thermal injection process, comprising:
step I: preparing a precursor solution: mixing a mercury halide and an oleylamine to obtain a mixed system, heating the mixed system to 100° C., and fully stirring to form a precursor solution;
step II: rapidly injecting trimethylsilyl tellurium into the precursor solution and reacting at a reaction temperature of 80-120° ° C. to obtain a mixed reaction system, wherein a molar ratio of tellurium, mercury, and oleylamine is 0.5:1:48;
step III: during reacting the trimethylsilyl tellurium and the precursor solution, injecting a polar solvent into the mixed reaction system, and performing an in-situ surface modification of quantum dots in a two-phase dynamic interface; and
step IV: cooling the mixed reaction system, and conducting separation and purification to obtain a medium wave infrared mercury quantum dot solution;
wherein the polar solvent in step III comprises one or more selected from the group consisting of methanol, acetonitrile, water, acetone, chloroform, and isopropanol.

### Claim 2 (depends on 1)

The method of claim 1, wherein the mercury halide in step I is one or more in any proportion selected from the group consisting of mercuric chloride, mercuric bromide, and mercuric iodide, and the mercury has a molar concentration of 0.03-0.1 mol/L.

### Claim 3 (depends on 1)

The method of claim 1, wherein the volume ratio of the polar solvent to the amine solvent in step III is 1:4.