# US 11,999,887 B2 · Core shell quantum dot, production method thereof, and electronic device including the same

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- Number: US 11,999,887 B2
- Document ID: US11999887B2
- Status: Granted
- Kind: B2
- Application number: 18/182,428
- Filed: 2023-03-13
- Published: 2023-07-13
- Granted: 2024-06-04
- Earliest claimed: 2019-10-17
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Jihyun Min; Sungwoo Hwang; Yong Wook Kim; Ji-Yeong Kim; Soo Kyung Kwon; Seon-Yeong Kim
- Web page: https://patentgrep.com/patent/US11999887B2

## CPC

- C09K 11/02: Use of particular materials as binders, particle coatings or suspension media therefor
- C01B 19/00: Selenium; Tellurium; Compounds thereof (phosphorus compounds C01B25/14)
- C01G 9/08: Sulfides
- C09K 11/565: {with zinc cadmium}
- C09K 11/883: {with zinc or cadmium}
- H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots
- H10K 59/38: comprising colour filters or colour changing media [CCM]
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- B82Y 40/00: Manufacture or treatment of nanostructures
- C01P 2002/74: by peak-intensities or a ratio thereof only
- C01P 2006/60: Optical properties, e.g. expressed in CIELAB-values
- G02B 6/005: {provided by one optical element, or plurality thereof, placed on the light output side of the light guide}
- H10K 59/12: Active-matrix OLED [AMOLED] displays
- H10K 59/35: comprising red-green-blue [RGB] subpixels
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS

## Abstract

A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d5/2 as an area percentage is less than or equal to about 25%.

## Claims

### Claim 1

A quantum dot comprising a semiconductor nanocrystal,
wherein the semiconductor nanocrystal comprises zinc, tellurium, and selenium,
wherein the quantum dot further comprises sulfur, and
wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for a Te oxide to a peak area for Te3d5/2 as an area percentage is less than or equal to about 25%.

### Claim 2 (depends on 1)

The quantum dot of claim 1, wherein the quantum dot has a mole ratio of tellurium to selenium that is greater than about 0.05:1 and less than or equal to about 4:1.

### Claim 3 (depends on 1)

The quantum dot of claim 1, wherein the quantum dot has a mole ratio of tellurium to selenium that is greater than or equal to about 0.5:1 and less than or equal to about 3.5:1.

### Claim 4 (depends on 1)

The quantum dot of claim 1, wherein the peak area for a Te oxide to the peak area for Te3d5/2 as an area percentage is less than or equal to about 20%.

### Claim 5 (depends on 1)

The quantum dot of claim 1, wherein the peak area for a Te oxide to the peak area for Te3d5/2 as an area percentage is less than or equal to about 10%.

### Claim 6 (depends on 1)

The quantum dot of claim 1, wherein the quantum dot further comprises an additional metal, and the additional metal comprises aluminum, gallium, lithium, or a combination thereof.

### Claim 7 (depends on 6)

The quantum dot of claim 6, wherein the quantum dot has a mole ratio of the additional metal to the tellurium that is greater than or equal to about 0.001 and less than or equal to about 1.5.

### Claim 8 (depends on 1)

The quantum dot of claim 1, wherein the semiconductor nanocrystal does not comprise an indium phosphide.

### Claim 9 (depends on 1)

The quantum dot of claim 1, wherein the quantum dot further comprises a semiconductor nanocrystal shell disposed on a core comprising the semiconductor nanocrystal, and wherein the semiconductor nanocrystal shell comprises a zinc chalcogenide, and the zinc chalcogenide comprises selenium, sulfur, or a combination thereof.

### Claim 10 (depends on 1)

The quantum dot of claim 1, wherein the quantum dot has a mole ratio of sulfur to selenium that is greater than 0.1:1 and less than or equal to about 4:1.

### Claim 11 (depends on 10)

The quantum dot of claim 10, wherein the mole ratio of sulfur to selenium is greater than or equal to about 0.5:1 and less than or equal to about 2.5:1.

### Claim 12 (depends on 1)

The quantum dot of claim 1, wherein the quantum dot has a mole ratio of sulfur to tellurium that is greater than 0.1:1 and less than or equal to about 3:1; or
wherein the quantum dot has a mole ratio of tellurium to zinc that is greater than 0.03:1 and less than or equal to about 0.5:1.

### Claim 13 (depends on 1)

The quantum dot of claim 1, wherein a maximum luminescent peak wavelength of the quantum dot is in a range of greater than about 450 nanometers and less than or equal to about 600 nanometers.

### Claim 14 (depends on 1)

The quantum dot of claim 1, wherein a maximum luminescent peak wavelength of the quantum dot is in a range of greater than or equal to about 500 nanometers and less than or equal to about 560 nanometers.

### Claim 15 (depends on 1)

The quantum dot of claim 1, wherein a maximum photoluminescent peak of the quantum dot has a full width at half maximum of less than or equal to about 30 nanometers.

### Claim 16 (depends on 1)

The quantum dot of claim 1, wherein the quantum dot has a quantum efficiency of greater than or equal to about 35%.

### Claim 17 (depends on 1)

The quantum dot of claim 1, wherein the semiconductor nanocrystal does not comprise cadmium, lead, mercury, or a combination thereof.

### Claim 18 (depends on 1)

A quantum dot composite comprising a matrix and a plurality of quantum dots dispersed in the matrix, wherein the plurality of quantum dots includes the quantum dot of claim 1.

### Claim 19 (depends on 1)

A display device comprising
a light emitting element,
wherein the light emitting element comprises a plurality of quantum dots, wherein the plurality of quantum dots includes the quantum dot of claim 1.

### Claim 20 (depends on 1)

An electronic device comprising:
a first electrode and a second electrode each having a surface opposite the other, and
an active layer disposed between the first electrode and the second electrode, the active layer comprising a plurality of quantum dots, wherein the plurality of quantum dots includes the quantum dot of claim 1.