# US 11,999,756 B2 · Method for producing organometallic compound and thin film fabricated using organometallic compound obtained thereby

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 11,999,756 B2
- Document ID: US11999756B2
- Status: Granted
- Kind: B2
- Application number: 17/722,654
- Filed: 2022-04-18
- Published: 2022-11-10
- Granted: 2024-06-04
- Earliest claimed: 2021-04-22
- Assignees: Hansol Chemical Co., Ltd.; Industry-Academic Cooperation Foundation, Yonsei University
- Applicants: Hansol Chemical Co., Ltd.; Industry-Academic Cooperation Foundation, Yonsei University
- Inventors: Jin-Hyung Seo; Mi-Ra Park; Jang-Hyeon Seok; Jung-Woo Park; Hyung-Jun Kim; Tae-Wook Nam; Yu-Jin Lee
- Web page: https://patentgrep.com/patent/US11999756B2

## CPC

- C07F 17/00: Metallocenes
- C23C 16/16: from metal carbonyl compounds
- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- C23C 30/00: Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process (C23C26/00, C23C28/00 take precedence)
- C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

The present invention relates to a method for producing a high yield of an organometallic compound including a step of allowing a metal hexacarbonyl compound to react with a hexahydro-1,3,5-triazine compound, and a thin film having excellent properties, fabricated by depositing the produced organometallic compound.

## Claims

### Claim 1

A method for producing an organometallic compound, the method comprising a first step of synthesizing a compound of the following Formula 2 by allowing a metal hexacarbonyl compound to react with a compound of the following Formula 1;
a second step of synthesizing a compound of the following Formula 4 by allowing the compound of Formula 2 to react with a compound of the following Formula 3;
a third step of synthesizing a compound of the following Formula 6 by allowing the compound of Formula 4 to react with a compound of the following Formula 5,
wherein
R1 to R3 are each independently hydrogen or a linear or branched hydrocarbon having 1 to 4 carbon atoms,
R4 is hydrogen or a linear or branched hydrocarbon having 1 to 3 carbon atoms,
R5 and R6 are each independently hydrogen or a linear or branched hydrocarbon having 1 to 4 carbon atoms,
R7 to R9 are hydrogen, and
M is tungsten (W).

### Claim 2 (depends on 1)

The method of claim 1, wherein the organometallic compound is a compound of the following Formula 7 or 8:

### Claim 3 (depends on 1)

A method for fabricating a thin film, the method including steps of:
(1) feeding and depositing a vapor deposition precursor, which comprises an organometallic compound produced by the method of claim 1, onto a substrate, and purging an unreacted portion of the vapor deposition precursor with inert gas; and
(2) feeding and allowing a reactant gas to react with the deposited vapor deposition precursor and purging an unreacted portion of the reactant gas,
wherein the reactant gas is activated by plasma,
a feeding time of the vapor deposition precursor in step (1) is 4 seconds or more, and
a feeding time of the reactant gas in step (2) is 8 seconds or more.

### Claim 4 (depends on 3)

The method of claim 3, wherein the reactant gas is any one or more selected from the group consisting of an oxidizing agent, a reducing agent, and a nitriding agent.

### Claim 5 (depends on 3)

The method of claim 3, wherein the thin film is deposited at a temperature of 350° C. or below and a growth rate of 0.21 Å/cycle or less.