# US 11,999,616 B2 · Dielectric thin film, capacitor element, and electronic circuit board

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- Number: US 11,999,616 B2
- Document ID: US11999616B2
- Status: Granted
- Kind: B2
- Application number: 17/269,698
- Filed: 2019-08-27
- Published: 2021-08-05
- Granted: 2024-06-04
- Earliest claimed: 2018-08-31
- Assignees: TDK Corporation
- Applicants: TDK Corporation
- Inventors: Kumiko Yamazaki; Wakiko Sato; Junichi Yamazaki
- Web page: https://patentgrep.com/patent/US11999616B2

## CPC

- C01B 21/0821: {Oxynitrides of metals, boron or silicon}
- C01G 35/006: {Compounds containing tantalum, with or without oxygen or hydrogen, and containing two or more other elements}
- C04B 35/58: based on borides, nitrides, {i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides} or silicides {(containing free binder metal C22C29/00)}
- C23C 14/0021: {Reactive sputtering or evaporation}
- C23C 14/0676: {Oxynitrides}
- C23C 14/08: Oxides (C23C14/10 takes precedence)
- C23C 14/28: by wave energy or particle radiation (C23C14/32 - C23C14/48 take precedence)
- C23C 14/586: {Nitriding}
- H01B 3/12: ceramics
- H01G 4/1218: {based on titanium oxides or titanates (H01G4/1245 takes precedence)}
- H01G 4/1254: {based on niobium or tungsteen, tantalum oxides or niobates, tantalates}
- H01G 4/306: {made by thin film techniques}
- H01G 4/33: Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)}
- H05K 1/162: {incorporating printed capacitors}
- H10D 1/68: Capacitors having no potential barriers
- C01P 2002/20: Two-dimensional structures
- C01P 2002/72: by d-values or two theta-values, e.g. as X-ray diagram
- C01P 2006/40: Electric properties
- C01P 2006/42: Magnetic properties
- H05K 1/185: associated with components encapsulated in the insulating substrate of the PCBs; associated with components incorporated in internal layers of multilayer circuit boards
- H05K 2201/10015: Non-printed capacitor
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

## Abstract

A capacitive element and a dielectric thin film having a small dielectric loss and a large relative permittivity, particularly at low frequencies. [Solution] This dielectric thin film includes an A-B—O—N oxynitride. When the A-B—O—N oxynitride is represented by the compositional formula AaBbOoNn, (o+n)/a<3.00 is satisfied.

## Claims

### Claim 1

A capacitor element comprising a dielectric thin film, wherein
the dielectric thin film consists of an A-B—O—N oxynitride, in which the A-B—O—N oxynitride is represented by a compositional formula of AaBbOoNn that satisfies (o+n)/a<3.00,
A and B are elements capable of forming an A-B—O oxide having a perovskite structure,
A is one or more selected from Sr, Ba, Ca, La, Nd, Na, and K; and B is one or more selected from Ta, Nb, Ti, and W, and
a crystal structure of the A-B—O—N oxynitride is a non-perovskite structure.

### Claim 2 (depends on 1)

The capacitor element according to claim 1, wherein (o+n)/a<2.95 is satisfied.

### Claim 3 (depends on 1)

The capacitor element according to claim 1, wherein n/a≤0.050 is satisfied.

### Claim 4 (depends on 1)

The capacitor element according to claim 1, wherein A is Sr and B is Ta.

### Claim 5 (depends on 1)

The capacitor element according to claim 1, wherein A is La and B is Ti.

### Claim 6 (depends on 1)

The capacitor element according to claim 1, wherein A is Ba and B is Ta.