Laser-written submicron pixels with tunable circular polarization and write-read-erase-reuse capability on a nano material or two-dimensional heterostructure at room temperature

A method of growing a nano-material or two-dimensional heterostructure for laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on the nano-material or two-dimensional heterostructure at room temperature, comprising the steps of:

• providing SiO2/Si substrates;
• cleaning the SiO2/Si substrates in acetone, IPA, and Piranha etch;
• rinsing the SiO2/Si substrates in deionized water;
• positioning at the center of a furnace a first quartz boat containing about 1 g of WO3 powder;
• positioning a first SiO2/Si substrate face-down, directly above the WO3 powder;
• positioning a second quartz boat containing sulfur powder upstream, outside the furnace-heating zone, for the synthesis of WS2;
• positioning a second SiO2/Si substrate above the second quartz boat;
• wherein the second SiO2/Si substrate contains perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) seeding molecules;
• wherein the first SiO2/Si substrate is untreated;
• allowing the PTAS seeding molecules to be carried downstream to the first substrate which is untreated;
• promoting lateral growth of a monolayer WS2;
• utilizing pure argon at 65 sccm as the furnace heats to a target temperature;
• heating the furnace to a temperature of 825° C.;
• adding 10 sccm H2 to the Ar flow and maintaining;
• cooling to room temperature;
• and
• resulting in a monolayer WS2.

A method of laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on a nano-material or two-dimensional heterostructure at room temperature, comprising the steps of:

• applying a laser to a nano-material or two-dimensional heterostructure;
• writing a submicron pixel;
• wherein the submicron pixel has a circular polarization;
• modifying the circular polarization;
• allowing the circular polarization to be tuned across a range of 39.9%;
• tuning photoluminescence intensity across a factor of 161 times;
• and
• tuning photoluminescence peak position across a range of 38 meV,
• wherein the nano-material or two-dimensional heterostructure comprises Bi2Se3/WS2.

A nano-material or two-dimensional heterostructure for laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on the nano-material or two-dimensional heterostructure at room temperature, formed by the steps of:

• providing SiO2/Si substrates;
• cleaning the SiO2/Si substrates in acetone, IPA, and Piranha etch;
• rinsing the SiO2/Si substrates in deionized water;
• positioning at the center of a furnace a first quartz boat containing about 1 g of WO3 powder;
• positioning a first SiO2/Si substrate face-down, directly above the WO3 powder;
• positioning a second quartz boat containing sulfur powder upstream, outside the furnace-heating zone, for the synthesis of WS2;
• positioning a second SiO2/Si substrate above the second quartz boat;
• wherein the second SiO2/Si substrate contains perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) seeding molecules;
• wherein the first SiO2/Si substrate is untreated;
• allowing the PTAS seeding molecules to be carried downstream to the first substrate which is untreated;
• promoting lateral growth of a monolayer WS2;
• utilizing pure argon at 65 sccm as the furnace heats to a target temperature;
• heating the furnace to a temperature of 825° C.;
• adding 10 sccm H2 to the Ar flow and maintaining;
• cooling to room temperature;
• and
• resulting in a monolayer WS2.

A laser-writing submicron pixel with tunable circular polarization and write-read-erase-reuse capability on a nano-material or two-dimensional heterostructure at room temperature, formed by the steps of:

• applying a laser to a nano-material or two-dimensional heterostructure;
• wherein the nano-material or two-dimensional heterostructure comprises Bi2Se3/WS2;
• wherein the submicron pixel has a circular polarization;
• modifying the circular polarization;
• allowing the circular polarization to be tuned across a range of 39.9%;
• wherein photoluminescence intensity can be tuned across a factor of 161 times;
• and
• wherein photoluminescence peak position can be tuned across a range of 38 meV.