Apparatus and techniques for substrate processing using independent ion source and radical source
AssigneeApplied Materials, Inc.
InventorsAnthony Renau, Joseph C. Olson, Peter F. Kurunczi
Life of this patent
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Abstract
A system may include a substrate stage to support a substrate, and a plurality of beam sources. The plurality of beam sources may include an ion beam source, the ion beam source arranged to direct an ion beam to the substrate, and a radical beam source, the radical beam source arranged to direct a radical beam to the substrate. The system may include a controller configured to control the ion beam source and the radical beam source to operate independently of one another, in at least one aspect, wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of a beam source with respect to the substrate.
Claims19
A system, comprising:
- a substrate stage to support a substrate;
- a plurality of beam sources, comprising:
- an ion beam source, the ion beam source arranged to direct an ion beam to the substrate;
- and
- a radical beam source, the radical beam source arranged to direct a radical beam to the substrate;
- a controller arranged for controlling the ion beam source and the radical beam source to operate independently of one another, in at least one aspect,
- wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of the beam source with respect to the substrate, the system further comprising:
- an ion beam source scanner to scan the ion beam source with respect to the substrate.
A system, comprising:
- a substrate stage to support a substrate;
- a plurality of beam sources, comprising:
- an ion beam source, the ion beam source arranged to direct an ion beam to the substrate;
- and
- a radical beam source, the radical beam source arranged to direct a radical beam to the substrate;
- a controller arranged for controlling the ion beam source and the radical beam source to operate independently of one another, in at least one aspect,
- wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of the beam source with respect to the substrate, the system further comprising:
- a radical beam source scanner to scan the radical beam source with respect to the substrate.
A system, comprising:
- a substrate stage to support a substrate;
- a plurality of beam sources, comprising:
- an ion beam source, the ion beam source arranged to direct an ion beam to the substrate;
- and
- a radical beam source, the radical beam source arranged to direct a radical beam to the substrate;
- a controller arranged for controlling the ion beam source and the radical beam source to operate independently of one another, in at least one aspect,
- wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of the beam source with respect to the substrate, wherein the ion beam source is configured to generate a ribbon ion beam, and wherein the radical beam source is configured to generate a ribbon radical beam.
A system, comprising:
- a substrate stage to support a substrate;
- a plurality of beam sources, comprising:
- an ion beam source, the ion beam source arranged to direct an ion beam to the substrate;
- and
- a radical beam source, the radical beam source arranged to direct a radical beam to the substrate;
- a controller arranged for controlling the ion beam source and the radical beam source to operate independently of one another, in at least one aspect,
- wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of the beam source with respect to the substrate, wherein the substrate stage is disposed in a process chamber, the system further comprising a barrier, extending within the process chamber and disposed between the ion beam source and the radical beam source.
Dependencies are inferred from the claim text.