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US 11,996,254 B2Granted
Active metal fuses for DC-EOS and surge protection
AssigneeTexas Instruments Incorporated
InventorsYogesh K. Ramadass, Ujwal Radhakrishna, Vinod Kuniganahalli Rai
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Abstract
A method comprises: forming a first metallization layer on a semiconductor die, the first metallization layer including a metal fuse; and forming a second metallization layer on the first metallization layer, in which the second metallization layer includes a thermal conductor spaced from the metal fuse, and the first metallization layer is between the second metallization layer and the semiconductor die.
Claims15
A method, comprising:
- forming a first metallization layer on a semiconductor die, the first metallization layer including a metal fuse;
- and
- forming a second metallization layer on the first metallization layer, in which the second metallization layer includes a thermal conductor spaced from the metal fuse, and the first metallization layer is between the second metallization layer and the semiconductor die.
Dependencies are inferred from the claim text.