# US 11,993,848 B2 · Gas nozzle, substrate processing apparatus, and substrate processing method

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 11,993,848 B2
- Document ID: US11993848B2
- Status: Granted
- Kind: B2
- Application number: 17/304,119
- Filed: 2021-06-15
- Published: 2021-12-23
- Granted: 2024-05-28
- Earliest claimed: 2020-06-19
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Kuniyasu Sakashita; Satoru Ogawa
- Web page: https://patentgrep.com/patent/US11993848B2

## CPC

- C23C 16/45578: {Elongated nozzles, tubes with holes}
- H10P 72/0432: {mainly by conduction}
- C23C 16/345: {Silicon nitride}
- C23C 16/401: {containing silicon}
- C23C 16/4412: {Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps}
- C23C 16/45544: {characterized by the apparatus}
- C23C 16/45574: {Nozzles for more than one gas}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A gas nozzle extending vertically inward of an inner wall of a processing container having a substantially cylindrical shape, includes a plurality of first gas holes provided at intervals in a longitudinal direction; and a second gas hole provided at a tip of the gas nozzle and oriented toward a side opposite to a side in which the plurality of first gas holes are provided in a plan view from the longitudinal direction, wherein the second gas hole has an opening area larger than an opening area of each of the first gas holes.

## Claims

### Claim 1

A gas nozzle extending vertically inward of an inner wall of a processing container having a substantially cylindrical shape, comprising:
a cylindrical portion having a cylindrical shape in the inner wall;
a closing portion located at a tip of the cylindrical portion to close the tip and having a rounded curved surface shape;
a plurality of first gas holes provided at the cylindrical portion at intervals in a longitudinal direction; and
a second gas hole provided at the closing portion and oriented diagonally upward with respect to the inner wall on a side opposite to a side in which the plurality of first gas holes are provided in a plan view from the longitudinal direction, wherein the second gas hole has an opening area larger than an opening area of each of the first gas holes.

### Claim 2 (depends on 1)

The gas nozzle of claim 1, wherein the second gas hole has an orientation angle of 30 to 90 degrees with respect to the longitudinal direction.

### Claim 3 (depends on 2)

The gas nozzle of claim 2, wherein the second gas hole is an opening that is circular, elliptical, rectangular, or rounded-corner rectangular in shape.

### Claim 4 (depends on 3)

The gas nozzle of claim 3, further comprising:
a third gas hole provided at the cylindrical portion on the side opposite to the side in which the plurality of first gas holes are provided in the plan view from the longitudinal direction, wherein the third gas hole is oriented in a direction different from a direction of the second gas hole.

### Claim 5 (depends on 4)

The gas nozzle of claim 4, wherein the plurality of first gas holes are oriented toward a center side of the processing container.

### Claim 6 (depends on 1)

The gas nozzle of claim 1, wherein the second gas hole is an opening that is circular, elliptical, rectangular, or rounded-corner rectangular in shape.

### Claim 7 (depends on 1)

The gas nozzle of claim 1, further comprising:
a third gas hole provided at the cylindrical portion on the side opposite to the side in which the plurality of first gas holes are provided in the plan view from the longitudinal direction, wherein the third gas hole is oriented in a direction different from a direction of the second gas hole.

### Claim 8 (depends on 1)

The gas nozzle of claim 1, wherein the plurality of first gas holes are oriented toward a center side of the processing container.

### Claim 9

A substrate processing apparatus comprising:
a processing container having a substantially cylindrical shape; and
a gas nozzle extending vertically inward of an inner wall of the processing container,
wherein the gas nozzle includes:
a cylindrical portion having a cylindrical shape in the inner wall;
a closing portion located at a tip of the cylindrical portion to close the tip and having a rounded curved surface shape;
a plurality of first gas holes provided at the cylindrical portion at intervals in a longitudinal direction; and
a second gas hole provided at the closing portion and oriented diagonally upward with respect to the inner wall on a side opposite to a side at which the plurality of first gas holes are provided in a plan view from the longitudinal direction, wherein the second gas hole has an opening area larger than that of each of the first gas holes.
