# US 11,993,845 B2 · High selectivity atomic layer deposition process

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- Number: US 11,993,845 B2
- Document ID: US11993845B2
- Status: Granted
- Kind: B2
- Application number: 16/809,318
- Filed: 2020-03-04
- Published: 2020-09-10
- Granted: 2024-05-28
- Earliest claimed: 2019-03-05
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Jong Choi; Christopher Ahles; Andrew C. Kummel; Keith Tatseun Wong; Srinivas D. Nemani
- Web page: https://patentgrep.com/patent/US11993845B2

## CPC

- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- H10W 20/037: {the barrier, adhesion or liner layers being on top of a main fill metal}
- C23C 16/04: Coating on selected surface areas, e.g. using masks
- C23C 16/40: Oxides
- C23C 16/401: {containing silicon}
- C23C 16/45531: {specially adapted for making ternary or higher compositions}
- C23C 16/4583: {the substrate being supported substantially horizontally}
- H10D 64/0112: {using conductive layers comprising silicides}
- H10P 14/432: {using selective deposition}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/6544: {to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer}
- H10P 14/6928: {the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides}
- H10P 72/0436: {mainly by radiation}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one embodiment, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate, forming a metal containing material selectively on a first material of the substrate, and thermal annealing the metal containing material formed on the substrate.

## Claims

### Claim 1

A method of forming a metal containing material on a substrate comprising:
pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate;
pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate;
forming a metal containing material selectively on a first material of the substrate, wherein the metal containing layer is a MoSiO layer; and
thermal annealing the metal containing material formed on the substrate.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first and second gas precursors are alternatively supplied.

### Claim 3 (depends on 1)

The method of claim 1, further comprising:
supplying a third gas precursor comprising an oxygen containing gas to the surface of the substrate.

### Claim 4 (depends on 3)

The method of claim 3, wherein the oxygen containing gas is 02.

### Claim 5 (depends on 1)

The method of claim 1, wherein the substrate comprises the first material and a second material different from the first material.

### Claim 6 (depends on 5)

The method of claim 5, wherein the first material is a silicon material or a metal material.

### Claim 7 (depends on 5)

The method of claim 5, wherein the second material is an insulating material.

### Claim 8 (depends on 7)

The method of claim 7, wherein the insulating material is at least one of SiO2, SiON, SiN, SiOC and SiOCH.

### Claim 9 (depends on 1)

The method of claim 1, wherein the metal containing precursor comprises molybdenum (Mo).

### Claim 10 (depends on 9)

The method of claim 9, wherein the metal containing precursor is at least one of molybdenum hexafluoride (MoF6), Mo(NMe2)4, MoCl5, MoCl6, Mo(CO)6, (C6H6)Mo(CO)3, (C6H3Me3)Mo(CO)3, (Ph[tBu]N)3Mo and Mo(allyl)4.

### Claim 11 (depends on 1)

The method of claim 1, wherein the silicon containing precursor is SiH4 or Si2H6.

### Claim 12 (depends on 1)

The method of claim 1, wherein thermal annealing the metal containing material further comprises:
maintaining a substrate temperature greater than 250 degrees Celsius.

### Claim 13 (depends on 1)

The method of claim 1, wherein thermal annealing the metal containing material further comprises:
incorporating an additional element into the metal containing material.

### Claim 14 (depends on 1)

The method of claim 1, wherein a purge gas is pulsed between pulsing of the first gas precursor and the second gas precursor.

### Claim 15

A method of forming a metal containing material on a substrate comprising:
performing an atomic layer deposition process by alternatively pulsing a first and a second gas precursor to a surface of a substrate comprising a first and a second material, wherein the first gas precursor comprises a metal containing gas;
selectively forming a metal containing material on the first material of the substrate, wherein the metal containing layer is a MoSiO layer; and
thermally annealing the metal containing material.

### Claim 16 (depends on 15)

The method of claim 15, wherein the metal containing gas is at least one of molybdenum hexafluoride (MoF6), Mo(NMe2)4, MoCl5, MoCl6, Mo(CO)6, (C6H6)Mo(CO)3, (C6H3Me3)Mo(CO)3, (Ph[tBu]N)3Mo and Mo(allyl)4.

### Claim 17 (depends on 15)

The method of claim 15, further comprising:
maintaining a substrate temperature less than 150 degrees Celsius while performing the atomic layer deposition process.

### Claim 18

A method of forming a metal containing material on a substrate comprising:
selectively forming a metal containing layer on a silicon material on a substrate than on an insulating material on the substrate by an atomic layer deposition process, wherein the metal containing layer is a MoSiO layer; and
maintaining a substrate temperature less than 150 degrees Celsius while performing the atomic layer deposition process.