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US 11,993,739 B2Granted
Nitride phosphor and method for producing same
AssigneeNichia Corporation
InventorsTakayuki Shinohara, Shimpei Kinoshita
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Abstract
Provided a method for producing a nitride phosphor. The method includes preparing a mixture that comprises a first nitride and a cerium source, the first nitride comprising, as a host crystal, a crystal having the same crystal structure as CaAlSiN3; and performing a heat treatment of the mixture at a temperature of 1,300° C. to 1,900° C. to obtain a second nitride. The first nitride comprises aluminum, silicon, nitrogen, and at least one selected from the group consisting of lithium, calcium, and strontium.
Claims12
A method for producing a nitride phosphor, the method comprising:
- preparing a mixture that comprises a first nitride and a cerium source, the first nitride comprising, as a host crystal, a crystal having the same crystal structure as CaAlSiN3;
- and
- performing a heat treatment of the mixture at a temperature of 1,300° C. to 1,900° C. to obtain a second nitride,
- wherein the first nitride comprises aluminum, silicon, nitrogen, lithium, and at least one selected from the group consisting of calcium and strontium.
1 more element
Dependencies are inferred from the claim text.