# US 11,992,914 B2 · Polishing composition, polishing method, and method for producing substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,992,914 B2 - Document ID: US11992914B2 - Status: Granted - Kind: B2 - Application number: 17/434,904 - Filed: 2020-03-24 - Published: 2022-02-24 - Granted: 2024-05-28 - Earliest claimed: 2019-03-27 - Assignees: Fujimi Incorporated - Applicants: Fujimi Incorporated - Inventors: I-Chun Chang - Web page: https://patentgrep.com/patent/US11992914B2 ## CPC - B24B 37/044: {characterised by the composition of the lapping agent} - B24B 37/00: Lapping machines or devices; Accessories (B24B3/00 takes precedence) - C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} - C09K 3/14: Anti-slip materials; Abrasives {(products specifically intended for the fabrication of abrasive tools, blocks or papers, or for operations of the kind of sand-blasting and barrelling B24B31/14, B24C1/00; polishing compositions containing abrasive or grinding agents C09G1/02; friction compositions for brakes or clutches F16D69/02; polishing of semi-conductors H10P52/40)} - H10P 52/403: {of conductive or resistive materials} - H10P 95/062: {involving a dielectric removal step} - H10P 95/08: {Planarisation of organic insulating materials} - H10W 20/062: {by smoothing of conductive parts, e.g. by planarisation} - H10W 20/092: {by smoothing the dielectric parts} - B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS - C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES - C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An object of the present invention is to provide a polishing composition which can make the removal rate of a metal material and the removal rate of a resin material the same or close to each other in a chemical mechanical polishing process, which can accordingly avoid or suppress the occurrence of a step difference. The polishing composition contains: abrasive grains containing silica, with at least a part of hydrogen atoms constituting a silanol group located on a surface of the silica being substituted with a cation of at least one metal atom M selected from the group consisting of aluminum, chromium, titanium, zirconium, iron, zinc, tin, scandium, and gallium; and a dispersing medium. The pH of the polishing composition is more than 2 and 7 or less. ## Claims ### Claim 1 A polishing composition comprising: abrasive grains containing silica, with at least a part of hydrogen atoms constituting a silanol group located on a surface of the silica being substituted with a cation of at least one metal atom M selected from the group consisting of aluminum, chromium, titanium, zirconium, iron, zinc, tin, scandium, and gallium; a metal polishing accelerator comprising an amino acid having 3 or 4 nitrogen atoms and a heterocyclic ring; a pH adjusting agent; and a dispersing medium, wherein a pH of the polishing composition is more than 2 and 7 or less. ### Claim 2 (depends on 1) The polishing composition according to claim 1, wherein the one metal atom M is bonded to one oxygen atom of one silanol group, the one metal atom M is bonded to two oxygen atoms of two silanol groups, or the one metal atom M is bonded to three oxygen atoms of three silanol groups. ### Claim 3 (depends on 1) The polishing composition according to claim 1, wherein a primary particle size of the abrasive grains is 40 to 150 nm. ### Claim 4 (depends on 1) The polishing composition according to claim 1, wherein a content of the abrasive grains is 0.1 to 10% by weight with respect to a total weight of the polishing composition. ### Claim 5 (depends on 1) The polishing composition according to claim 1, further comprising: an oxidizing agent having a standard electrode potential of 0.5 V or more; and a metal polishing accelerator. ### Claim 6 (depends on 1) The polishing composition according to claim 1, wherein the polishing composition is used for polishing an object to be polished containing a resin. ### Claim 7 (depends on 6) The polishing composition according to claim 6, wherein a melting point of the resin is 200° C. or higher. ### Claim 8 (depends on 7) The polishing composition according to claim 7, wherein the resin has a nitrogen atom. ### Claim 9 (depends on 1) The polishing composition according to claim 1, wherein the pH of the polishing composition is more than 4 and 7 or less. ### Claim 10 (depends on 1) A polishing method comprising a step of polishing an object to be polished using the polishing composition according to claim 1, wherein a surface of the object to be polished includes a patterned structure, and the patterned structure contains a resin. ### Claim 11 (depends on 10) The polishing method according to claim 10, wherein the patterned structure further contains a metal material, and the metal material contains at least one selected from the group consisting of copper, aluminum, cobalt, tungsten, and combinations thereof. ### Claim 12 (depends on 11) The polishing method according to claim 11, wherein when a removal rate of the polishing composition with respect to the resin at a polishing pressure of 5 psi is defined as a first removal rate R1 and a removal rate of the polishing composition with respect to the metal material at a polishing pressure of 5 psi is defined as a second removal rate R2, a value of a ratio of the first removal rate to the second removal rate R1/R2 is 0.5 to 6.0. ### Claim 13 (depends on 1) A method for producing a substrate, the method comprising the steps of: preparing a substrate; and polishing the substrate using the polishing composition according to claim 1, wherein a surface of the substrate includes a pattern structure, and the pattern structure contains a resin and a metal material.