# US 11,992,900 B2 · Methods to fabricate chamber component holes using laser drilling > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,992,900 B2 - Document ID: US11992900B2 - Status: Granted - Kind: B2 - Application number: 17/090,770 - Filed: 2020-11-05 - Published: 2022-04-14 - Granted: 2024-05-28 - Earliest claimed: 2020-10-14 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Sumit Agarwal; Timothy Joseph Franklin - Web page: https://patentgrep.com/patent/US11992900B2 ## CPC - B23K 26/388: Trepanning, i.e. boring by moving the beam spot about an axis - H01L 21/306 - H01L 21/67207 - B23K 26/0624: {using ultrashort pulses, i.e. pulses of 1 ns or less} - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - H01L ## Abstract Embodiments of a method of forming one or more holes in a substrate for use as a process chamber component are provided herein. In some embodiments, a method of forming one or more holes in a substrate for use as a process chamber component include forming the one or more holes in the substrate with one or more laser drills using at least one of a percussion drilling, a trepanning, or an ablation process, wherein each of the one or more holes have an aspect ratio of about 1:1 to about 50:1, and wherein the substrate is a component for gas delivery or fluid delivery. ## Claims ### Claim 1 A method of forming one or more holes in a substrate for use as a process chamber component comprising: forming the one or more holes in the substrate with one or more laser drills using at least one of a percussion drilling process, a trepanning process, or an ablation process, wherein each of the one or more holes have an aspect ratio of about 1:1 to about 50:1, and wherein the substrate is a component for gas delivery or fluid delivery, wherein the percussion drilling process or the ablation process comprises a pulse duration of about 1.0 nanosecond or less, further comprising: (1) wherein the substrate has a thickness of about 0.70 mm to about 10.0 mm, wherein the one or more holes are formed from a first side of the substrate to a second side of the substrate, and wherein forming the one or more holes comprises: forming one or more rough holes through the substrate via the percussion drilling process using the one or more laser drills or a mechanical drilling process; and using the one or more laser drills to finish the one or more rough holes to form the one or more holes via at least one of the ablation or the trepanning process, wherein finishing the one or more rough holes comprises at least one of reducing a roughness of the one or more rough holes, increasing a roundness of the one or more rough holes, increasing a diameter of the one or more rough holes, or making the one or more rough holes more uniform in diameter with respect to each other, or (2) wherein the substrate has a thickness of about 10.0 mm to about 20.0 mm, and wherein forming the one or more holes comprises: using the one or more laser drills to drill first partial holes via an ablation process from a first side of the substrate to a first location disposed between the first side and a second side of the substrate; and using the one or more laser drills to drill second partial holes via an ablation process from the second side of the substrate to the first location. ### Claim 2 (depends on 1) The method of claim 1, wherein the percussion drilling process or the ablation process comprises a pulse energy of about 1.0 to about 8.0 millijoules. ### Claim 3 (depends on 1) The method of claim 1, wherein at least one of: a diameter of the first partial holes is greater than a diameter of the second partial holes, or a diameter of the one or more holes is about 75.0 micrometers to about 750.0 micrometers. ### Claim 4 (depends on 1) The method of claim 1, further comprising directing a purge gas to the one or more holes while forming the one or more holes. ### Claim 5 (depends on 1) The method of claim 1, wherein the substrate is made of silicon, silicon carbide, aluminum, nickel, molybdenum, or a ceramic material. ### Claim 6 (depends on 1) The method of claim 1, wherein the one or more holes are drilled at a speed of about 0.1 mm per second or faster. ### Claim 7 (depends on 1) The method of claim 1, wherein the one or more holes extend at an angle of incidence relative to a vertical axis of the substrate between about zero degrees to about ninety degrees. ### Claim 8 A method of forming one or more holes in a substrate for use in a process chamber, comprising: placing the substrate on a substrate support, wherein the substrate is a gas distribution plate comprising silicon; and forming the one or more holes in the substrate with one or more laser drills using at least one of a percussion drilling process, a trepanning process, or an ablation process, wherein the percussion drilling process or the ablation process comprises a pulse duration of about 1.0 nanosecond or less, and wherein forming the one or more holes, comprises: (1) using the one or more laser drills to drill first partial holes via an ablation process from a first side of the substrate to a first location disposed between the first side and a second side of the substrate, and using the one or more laser drills to drill second partial holes via an ablation process from the second side of the substrate to the first location, or (2) forming one or more rough holes through the substrate via the percussion drilling process using the one or more laser drills or a mechanical drilling process, and using the one or more laser drills to finish the one or more rough holes via at least one of an ablation process or trepanning process. ### Claim 9 (depends on 8) The method of claim 8, wherein the first partial holes are drilled to a larger diameter than the second partial holes. ### Claim 10 An apparatus for forming holes in a substrate for use in a process chamber, comprising: a substrate support having one or more retaining surfaces for holding the substrate and a central opening to expose a bottom surface of the substrate, wherein the substrate support is configured to at least one of translate along an elongate axis of the substrate or rotate about a central axis of the substrate support; and one or more laser drills disposed at least one of above or below the substrate support, wherein the one or more laser drills are configured to direct photon energy towards the substrate with a pulse duration of about 1.0 nanosecond or less and with a pulse energy of about 1.0 to about 8.0 millijoules. ### Claim 11 (depends on 10) The apparatus of claim 10, wherein the one or more laser drills are disposed above and below the substrate support. ### Claim 12 (depends on 10) The apparatus of claim 10, wherein the substrate support is configured to rotate about an elongate axis of the substrate support orthogonal to the central axis. ### Claim 13 (depends on 10) The apparatus of claim 10, wherein the one or more laser drills are configured to at least one of move in a lateral direction or rotate with respect to the substrate support. ### Claim 14 (depends on 10) The apparatus of claim 10, wherein the one or more laser drills comprise two laser drills disposed on opposite sides of the substrate support. ### Claim 15 (depends on 10) The apparatus of claim 10, wherein the substrate support is configured to rotate about the elongate axis.