# US 11,992,694 B2 · Building block for electro-optical integrated indium-phosphide based phase modulator

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- Number: US 11,992,694 B2
- Document ID: US11992694B2
- Status: Granted
- Kind: B2
- Application number: 17/395,771
- Filed: 2021-08-06
- Published: 2021-12-02
- Granted: 2024-05-28
- Earliest claimed: 2019-02-07
- Assignees: Smart Photonics Holding B.V.
- Applicants: Smart Photonics Holding B.V.
- Inventors: Rastko Pajkovic; Erwin Antonius Josephus Maria Bente; Stefanos Andreou; Theodorus Thomas Marinus Van Schaijk
- Web page: https://patentgrep.com/patent/US11992694B2

## CPC

- G02F 1/017: Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F 1/025: in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence)
- A61N 2/02: using magnetic fields produced by coils, including single turn loops or electromagnets (A61N2/12 takes precedence)
- G02B 6/122: Basic optical elements, e.g. light-guiding paths
- H01S 5/026: Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06)
- A61B 6/032: {Transmission computed tomography [CT]}
- A61B 6/037: {Emission tomography}
- A61B 6/50: specially adapted for specific body parts; specially adapted for specific clinical applications
- A61K 45/06: Mixtures of active ingredients without chemical characterisation, e.g. antiphlogistics and cardiaca
- A61N 2/002: {in combination with another treatment}
- A61N 2/004: {specially adapted for a specific therapy}
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- A61N: ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY (measurement of bioelectric currents A61B; surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body A61B18/00; anaesthetic apparatus in general A61M; incandescent lamps H01K; infrared radiators for heating H05B)
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- A61B: DIAGNOSIS; SURGERY; IDENTIFICATION (usefulness limited to only animals A61D)
- A61K: PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES (devices or methods specially adapted for bringing pharmaceutical products into particular physical or administering forms A61J3/00; chemical aspects of, or use of materials for deodorisation of air, for disinfection or sterilisation, or for bandages, dressings, absorbent pads or surgical articles A61L; soap compositions C11D)

## Abstract

A photonic integrated circuit, PIC, comprising a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers forming a PIN or PN doping structure, the PIC comprising a waveguide arranged for conducting light waves; an optical element connected to the waveguide, wherein the optical element, in operation, is in reverse-bias mode, and wherein the optical element comprises a contact layer arranged for connecting to a voltage source; wherein the waveguide comprises conducting contacts proximal to the optical element, and wherein the PIC further comprises at least one isolation section arranged in between the optical element and the conducting contacts. Corresponding methods of operation of such a PIC are also presented herein.

## Claims

### Claim 1

A photonic integrated circuit, PIC, comprising a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers forming at least one of a PIN or PN doping structure, the PIC comprising:
a waveguide arranged for conducting light waves, the waveguide comprising at least part of a waveguiding layer, which is one of the layers of the plurality of semiconductor layers;
an optical element comprising at least part of the waveguiding layer, which is one of the layers of the plurality of semiconductor layers, wherein the at least parts of the waveguiding layer of the waveguide and the optical element are connected to one another, wherein the optical element is operable in reverse-bias mode, and wherein the optical element comprises a contact layer arranged for connecting to a voltage source;
a plurality of conducting contacts connected to one another by a metallic conducting layer, wherein the waveguide comprises at least one conducting contact of the plurality of conducting contacts, the at least one conducting contact proximal to the optical element; and
at least one isolation section arranged between the contact layer and the at least one conducting contact.

### Claim 2 (depends on 1)

The photonic integrated circuit according to claim 1, wherein the at least one isolation section is arranged between the optical element and the at least one conducting contact.

### Claim 3 (depends on 2)

The photonic integrated circuit according to claim 2, wherein the at least one conducting contact is configured on both sides of the optical element with respect to a direction of the light waves in the waveguide.

### Claim 4 (depends on 1)

The photonic integrated circuit according to claim 1, wherein the at least one conducting contact is configured on both sides of the optical element with respect to a direction of the light waves in the waveguide.

### Claim 5 (depends on 1)

The photonic integrated circuit according to claim 1, wherein the at least one conducting contact extends over substantially the entire waveguide.

### Claim 6 (depends on 1)

The photonic integrated circuit according to claim 1, wherein at least one of:
the at least one isolation section is arranged between the optical element and the at least one conducting contact, and the at least one conducting contact extends over substantially the entire waveguide; or
the at least one conducting contact is configured on both sides of the optical element with respect to a direction of the light waves in the waveguide, and the at least one conducting contact extends over substantially the entire waveguide.

### Claim 7 (depends on 1)

The photonic integrated circuit according to claim 1, wherein the at least one conducting contact is connected to an electrical ground.

### Claim 8 (depends on 7)

The photonic integrated circuit according to claim 7, wherein the PIC further comprises a grounding hole arranged for allowing a contact between the at least one conducting contact and an n-doped layer wherein distance between an edge of the grounding hole and the waveguide is at least 10 μm, the distance being measured in a direction perpendicular to that of propagation of light in the waveguiding layer.

### Claim 9 (depends on 8)

The photonic integrated circuit according to claim 8, wherein at least one dimension of a cross section of the grounding hole in a plane parallel to the direction of propagation of light in the waveguiding layer is at least 20 μm.

### Claim 10 (depends on 1)

The photonic integrated circuit according to claim 1, wherein the length of the at least one conducting contact measured in a direction of propagation of light in the waveguiding layer is at least 20 μm.

### Claim 11 (depends on 1)

The photonic integrated circuit in accordance with claim 1, wherein the at least one conducting contact comprises at least one of Titanium, Gold or Platinum.

### Claim 12 (depends on 1)

The photonic integrated circuit according to claim 1 wherein the optical element is at least one of a
Electro-Refractive Modulator, ERM, or
Photodetector.

### Claim 13

A photonic integrated circuit, PIC, comprising a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers forming at least one of a PIN or PN doping structure, the PIC comprising:
a waveguide arranged for conducting light waves, the waveguide comprising a waveguiding layer, which is one of the layers of the plurality of semiconductor layers;
an optical element comprising a waveguiding layer, which is one of the layers of the plurality of semiconductor layers, which waveguiding layers of the waveguide and the optical element are connected to one another, wherein the optical element is operable in reverse-bias mode, and wherein the optical element comprises a contact layer arranged for connecting to a voltage source, wherein the waveguide comprises at least one conducting contact proximal to the optical element, and wherein at least one of:
the at least one conducting contact is connected to an electrical ground,
the optical element is an electro refractive modulator, or
the optical element is a photodetector; and
at least one isolation section arranged between the contact layer and the at least one conducting contact.

### Claim 14

A method of fabricating a photonic integrated circuit, PIC, comprising providing a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers forming at least one of a PIN or PN doping structure, the PIC comprising:
a waveguide arranged for conducting light waves, the waveguide comprising a waveguiding layer, which is one of the layers of the plurality of semiconductor layers;
an optical element comprising a waveguiding layer, which is one of the layers of the plurality of semiconductor layers, which waveguiding layers of the waveguide and the optical element are connected to one another, wherein the optical element is operable in reverse-bias mode, and wherein the optical element comprises a contact layer arranged for connecting to a voltage source, wherein the waveguide comprises at least one conducting contact proximal to the optical element, and wherein at least one of:
the at least one conducting contact is connected to an electrical ground,
the optical element is an electro refractive modulator, or
the optical element is a photodetector; and
at least one isolation section arranged between the contact layer and the at least one conducting contact.

### Claim 15

A method of fabricating a photonic integrated circuit, PIC, comprising providing a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers forming at least one of a PIN or PN doping structure, the PIC comprising:
a waveguide arranged for conducting light waves, the waveguide comprising at least part of a waveguiding layer, which is one of the layers of the plurality of semiconductor layers;
an optical element comprising at least part of the waveguiding layer, which is one of the layers of the plurality of semiconductor layers, wherein the at least parts of the waveguiding layer of the waveguide and the optical element are connected to one another, wherein the optical element is operable in reverse-bias mode, and wherein the optical element comprises a contact layer arranged for connecting to a voltage source;
a plurality of conducting contacts connected to one another by a metallic conducting layer, wherein the waveguide comprises at least one conducting contact of the plurality of conducting contacts, the at least one conducting contact proximal to the optical element; and
at least one isolation section arranged between the contact layer and the at least one conducting contact.

### Claim 16 (depends on 15)

The method of fabricating a photonic integrated circuit according to claim 15, wherein the optical element is any at least one of a
Electro-Refractive Modulator, ERM, or
Photodetector.

### Claim 17 (depends on 15)

The method of fabricating a photonic integrated circuit according to claim 15, wherein the at least one isolation section is arranged between the optical element and the at least one conducting contact.

### Claim 18 (depends on 15)

The method of fabricating a photonic integrated circuit according to claim 15, wherein the at least one conducting contact is configured on both sides of the optical element with respect to a direction of the light waves in the waveguide.

### Claim 19 (depends on 15)

The method of fabricating a photonic integrated circuit according to claim 15, wherein the at least one conducting contact extends over substantially the entire waveguide.