High-frequency terminator
AssigneesKabushiki Kaisha Toshiba, Toshiba Infrastructure Systems & Solutions Corporation
InventorYasuaki Asahi
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AssigneesKabushiki Kaisha Toshiba, Toshiba Infrastructure Systems & Solutions Corporation
InventorYasuaki Asahi
Estimating the term…
A high-frequency terminator includes a dielectric substrate, a metal layer provided on a back surface of the dielectric substrate, a transmission line provided on a front surface of the dielectric substrate, a resistor provided on the front surface of the dielectric substrate and connected to the transmission line, and a conductor electrically connecting the resistor and the metal layer. The dielectric substrate includes a first substrate part having a first thickness in a direction from the back surface toward the front surface, and a second substrate part having a second thickness in the direction that is less than the first thickness. The transmission line extends from the first substrate part to the second substrate part and is connected to the resistor on the second substrate part. The conductor electrically connects the metal layer and the resistor at the second substrate part.
A high-frequency terminator, comprising:
Dependencies are inferred from the claim text.