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US 11,990,498 B2Granted
CMOS cap for MEMS devices
AssigneeMeridian Innovation Pte Ltd
InventorsWan Chia Ang, Piotr Kropelnicki, Ilker Ender Ocak, Paul Simon Pontin
Life of this patent
Estimating the term…
Abstract
A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermoconforms. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings.
Claims19
A device comprising:
- a substrate prepared with a complementary metal oxide semiconductor (CMOS) region with CMOS devices and a sensor region with micro-electro-mechanical system (MEMS) region with a MEMS component, wherein the MEMS component comprises a thermoelectric IR sensor;
- and
- a CMOS compatible cap disposed on the substrate over the CMOS region and MEMS region, wherein the CMOS compatible cap includes CMOS layers, the CMOS compatible cap comprises
- a first cap portion disposed over the MEMS region,
- a second cap portion disposed over the CMOS region, and
- wherein the first cap portion over the MEMS region is elevated above the second cap portion over the CMOS region to create a cap cavity over the MEMS region.
3 more elements
A device comprising:
- a substrate prepared with a complementary metal oxide semiconductor (CMOS) region with CMOS devices and a sensor region with micro-electro-mechanical system (MEMS) region with a MEMS component;
- and
- a CMOS compatible cap disposed on the substrate over the CMOS region and MEMS region, wherein the CMOS compatible cap includes CMOS layers, the CMOS compatible cap comprises
- a first cap portion disposed over the MEMS region,
- a second cap portion disposed over the CMOS region,
- wherein the first cap portion over the MEMS region is elevated above the second cap portion over the CMOS region to create a cap cavity over the MEMS region,
- a base cap having at least one cap release opening, and
- a seal cap for sealing the at least one cap release opening in the base cap.
5 more elements
A device comprising:
- a substrate prepared with a complementary metal oxide semiconductor (CMOS) region with CMOS devices and a sensor region with micro-electro-mechanical system (MEMS) region with a MEMS component, wherein the MEMS component comprises a thermoelectric IR sensor;
- and
- a CMOS compatible cap disposed on the substrate over the CMOS region and MEMS region, wherein the CMOS compatible cap includes CMOS layers, the CMOS compatible cap is elevated over the MEMS region to provide a cap cavity between the CMOS compatible cap and the MEMS region, wherein a bottom surface of the CMOS compatible cap above the MEMS device region is non-planar, the bottom surface of the CMOS compatible cap includes a depression above the MEMS device region, the CMOS compatible cap comprises
- a base cap having a CMOS IR transparent base cap layer, the base cap includes a cap release opening, and
- a seal cap for sealing the cap release opening in the base cap.
2 more elements
A device comprising:
- a substrate prepared with a complementary metal oxide semiconductor (CMOS) region with CMOS devices and a sensor region with micro-electro-mechanical system (MEMS) region with a MEMS component;
- a CMOS compatible IR transparent cap disposed on the substrate over the CMOS region and MEMS region, wherein the CMOS IR transparent compatible cap includes CMOS layers, the CMOS compatible cap is elevated over the MEMS region to provide a cap cavity between the CMOS compatible cap and the MEMS region;
- an interlevel dielectric (ILD) layer disposed on the substrate over the CMOS region and MEMS region, covering the CMOS devices and MEMS component, the ILD layer includes ILD contacts coupled to contact regions of the CMOS devices;
- a back-end-of-line (BEOL) dielectric is disposed on the ILD layer, the BEOL dielectric includes a plurality of intermetal dielectric (IMD) levels, wherein an IMD level includes a metal level with metal lines and a via level thereover with via contacts;
- and
- a passivation layer disposed over a top metal level of the BEOL dielectric.
3 more elements
Dependencies are inferred from the claim text.