Optoelectronic device including a superlattice
AssigneeSilanna UV Technologies Pte Ltd
InventorPetar Atanackovic
Life of this patent
Estimating the term…
Abstract
In embodiments, an optoelectronic device comprises a substrate formed of magnesium oxide, and a multi-region stack epitaxially deposited upon the substrate. The multi-region stack may comprise a non-polar crystalline material structure along a growth direction, or may comprise a crystal polarity having an oxygen-polar crystal structure or a metal-polar crystal structure along the growth direction. In some cases, at least one region of the multi-region stack is a bulk semiconductor material comprising Mg(x)Zn(1-x)O. In some cases, at least one region of the multi-region stack is a superlattice comprising MgO and Mg(x)Zn(1-x)O.
Claims15
An optoelectronic device comprising:
- a substrate formed of magnesium oxide;
- and
- a multi-region stack epitaxially deposited upon the substrate, wherein the multi-region stack comprises a non-polar crystalline material structure along a growth direction, wherein the multi-region stack comprises:
- a first region comprising a crystal structure improvement layer;
- a second region on the first region and comprising a first conductivity type;
- a third region comprising an intrinsic conductivity type layer;
- and
- a fourth region comprising a second conductivity type, the second conductivity type being opposite the first conductivity type, wherein the third region is between the second region and the fourth region;
- wherein at least one region of the multi-region stack is a bulk semiconductor material comprising Mg(x)Zn(1-X)O;
- wherein at least one region of the multi-region stack is a superlattice comprising MgO and Mg(X)Zn(1-X)O;
- and
- wherein the Mg(X)Zn(1-X)O of the bulk semiconductor material or the superlattice is a non-polar rocksalt, and x >0.55.
An optoelectronic device comprising:
- a substrate formed of magnesium oxide;
- and
- a multi-region stack epitaxially deposited upon the substrate, wherein the multi-region stack comprises a crystal polarity having an oxygen-polar crystal structure or a metal-polar crystal structure along a growth direction, and wherein the multi-region stack comprises:
- a first region comprising a crystal structure improvement layer;
- a second region on the first region and comprising a first conductivity type;
- a third region comprising an intrinsic conductivity type layer;
- and
- a fourth region comprising a second conductivity type, the second conductivity type being opposite the first conductivity type, wherein the third region is between the second region and the fourth region;
- wherein at least one region of the multi-region stack is a bulk semiconductor material comprising Mg(x)Zn(1-x)O;
- wherein at least one region of the multi-region stack is a superlattice comprising MgO and Mg(x)Zn(1-x)O;
- and
- wherein the Mg(x)Zn(1-x)O of the bulk semiconductor material or the superlattice has x<0.45.
Dependencies are inferred from the claim text.