Apparatus and method for programming data in a non-volatile memory device

A method for operating a memory device, comprising:

• receiving multi-bit data to be programmed in plural non-volatile memory cells;
• applying program pulses to at least two non-volatile memory cells in an erased state among the plural non-volatile memory cells to gradually increase threshold voltages of the at least two non-volatile memory cells from the erased state to a first program state which is the lowest program state among a plurality of program states corresponding to the multi-bit data;
• performing a first verification operation for determining whether the at least non-volatile memory cells have a threshold voltage corresponding to the first program state;
• applying a single first program pulse to a first non-volatile memory cell among the at least two non-volatile memory cells based on a result of the first verification operation to increase a threshold voltage of the first non-volatile memory cell to a second program state among the plurality of program states corresponding to the multi-bit data which is higher than the first program state, the first program pulse corresponding to a difference between the first program state and the second program state;
• and
• applying a single second program pulse to a second non-volatile memory cell among the at least two non-volatile memory cells based on a result of the first verification operation to increase a threshold voltage of the second non-volatile memory cell to a third program state among the plurality of program states corresponding to the multi-bit data which is higher than the second program state, the second program pulse corresponding to a difference between the first program state and the third program state.

A memory system, comprising:

• a controller configured to receive data from an external device, determine a location in which the data is to be stored, and generate multi-bit data to be stored in the location;
• and
• a memory device configured to:
• receive the multi-bit data according to the location from the controller,
• apply program pulses to at least two non-volatile memory cells in an erased state among a plurality of non-volatile memory cells to gradually increase threshold voltages of the at least two non-volatile memory cells from the erased state to a first program state which is the lowest program state among a plurality of program states corresponding to the multi-bit data,
• perform a first verification operation for determining whether the at least non-volatile memory cells have a threshold voltage corresponding to the first program state,
• apply a single first program pulse to a first non-volatile memory cell among the at least two non-volatile memory cells based on a result of the first verification operation to increase a threshold voltage of the first non-volatile memory cell to a second program state among the plurality of program states corresponding to the multi-bit data which is higher than the first program state, the first program pulse corresponding to a difference between the first program state and the second program state, and
• apply a single second program pulse to a second non-volatile memory cell among the at least two non-volatile memory cells based on a result of the first verification operation to increase a threshold voltage of the second non-volatile memory cell to a third program state among the plurality of program states corresponding to the multi-bit data which is higher than the second program state, the second program pulse corresponding to a difference between the first program state and the third program state.