Ultra-high dielectric constant garnet
AssigneeSkyworks Solutions, Inc.
InventorsDavid Bowie Cruickshank, Michael David Hill
Life of this patent
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Abstract
Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas.
Claims21
A radiofrequency device including a high dielectric garnet material, the radiofrequency device comprising:
- a component formed from a synthetic garnet material having a structure including dodecahedral sites, the structure having bismuth occupying at least some of the dodecahedral sites, the structure having indium occupying an octahedral site, indium occupying at least some of the dodecahedral sites, and the structure having a dielectric constant value of at least 31.
A synthetic garnet material comprising a structure including dodecahedral sites, the structure having bismuth occupying at least some of the dodecahedral sites, the structure having indium occupying an octahedral site, indium occupying at least some of the dodecahedral sites, and and a dielectric constant value of at least 31.
A synthetic garnet material comprising a structure including dodecahedral sites, the structure having bismuth occupying at least some of the dodecahedral sites, the structure having an additional large rare earth ion occupying at least some of the dodecahedral sites, the structure having indium occupying an octahedral site and indium occupying at least some of the dodecahedral sites.
Dependencies are inferred from the claim text.