Semiconductor device and a method of manufacture of a semiconductor device

Abstract

A semiconductor device is provided that includes a first n+ region, a first p+ region within the first n+ region, a second n+ region, a second p+ region, positioned between the first n+ region and the second n+ region. The first n+ region, the second n+ region and the second p+ region are positioned within a p− region. A first space charge region and a second space charge region are formed within the p− region. The first space region is positioned between the first n+ region and the second p+ region, and the second space region is positioned between the second p+ region and the second n+ region.

Dependencies are inferred from the claim text.