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US 11,984,475 B2Granted
High voltage avalanche diode for active clamp drivers
AssigneeTexas Instruments Incorporated
InventorsHenry Litzmann Edwards, Joseph Maurice Khayat, Archana Venugopal
Life of this patent
Estimating the term…
Abstract
An integrated circuit includes a shallow P-type well (SPW) below a surface of a semiconductor substrate and a shallow N-type well (SNW) below the surface. The SPW forms an anode of a diode and the SNW forms a cathode of the diode. The SNW is spaced apart from the SPW by a well space region; and a thin field relief oxide structure lies over the well space region.
Claims19
An integrated circuit comprising:
- a shallow P-type well (SPW) in a semiconductor substrate, the SPW forming an anode of a diode;
- a shallow N-type well (SNW) in the semiconductor substrate and spaced apart from the SPW, the SNW forming a cathode of the diode, the SNW separated from the SPW by a well space region;
- a field relief oxide structure at a surface of the semiconductor substrate over the well space region;
- a first polysilicon field plate partially over the field relief oxide structure and partially over the SNW;
- and
- a second polysilicon field plate partially over the field relief oxide structure and partially over the SPW.
3 more elements
An integrated circuit comprising:
- a diode having:
- a P-type well and an N-type well extending into a semiconductor substrate and spaced apart by a well space region;
- an anode terminal formed on the P-type well and a cathode terminal formed on the N-type well;
- a shallow-trench isolation (STI) structure that surrounds the anode terminal and the cathode terminal;
- a field relief oxide structure between the anode terminal and the cathode terminal, the field relief oxide structure having a thickness no greater than one-half a thickness of the STI structure;
- and
- a first field plate on the field relief oxide structure and extending over the N-type well, and a second field plate on the field relief oxide structure and extending over the P-type well.
4 more elements
An integrated circuit comprising:
- a shallow P-type well (SPW) in a semiconductor substrate, the SPW forming an anode of a diode;
- a shallow N-type well (SNW) in the semiconductor substrate and spaced apart from the SPW, the SNW forming a cathode of the diode, the SNW separated from the SPW by a well space region;
- a field relief oxide structure at a surface of the semiconductor substrate over the well space region;
- an N-doped channel-stop region within the SNW with a peak dopant concentration below the surface;
- and
- a P-doped channel-stop region within the SPW with a peak dopant concentration below the surface.
3 more elements
Dependencies are inferred from the claim text.