Monitoring circuit monitoring performance of transistors
AssigneeSK hynix Inc.
InventorSung Mook Kim
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Abstract
A monitoring circuit according to an embodiment of the present disclosure includes a booster configured to amplify a current amount between a terminal to which a power voltage is applied and a ground terminal to generate a sensing voltage, and an oscillator configured to output a sensing signal of which a frequency is adjusted in response to the sensing voltage, wherein the booster includes a transistor having a first size and a transistor having a second size greater than the first size, and wherein the oscillator includes a plurality of transistors having a third size greater than the first size.
Claims20
A monitoring circuit comprising:
- a booster configured to amplify a current amount between a power voltage terminal to which a power voltage is applied and a ground terminal to generate a sensing voltage;
- and
- an oscillator configured to output a sensing signal of which a frequency is adjusted in response to the sensing voltage,
- wherein the booster includes a first transistor having a first size and a second transistor having a second size greater than the first size, the first and second transistors being of a same conductivity type,
- wherein the first transistor and the second transistor are coupled in series between the power voltage terminal and the ground terminal, and
- wherein the oscillator includes a plurality of transistors having a third size greater than the first size.
A monitoring circuit comprising:
- a first sensing circuit including PMOS transistors having different lengths of channels, and configured to output a first sensing signal of which a first frequency is adjusted according to a current generated by the PMOS transistors, the first sensing circuit including a first booster comprising the PMOS transistors having the different lengths of channels;
- and
- a second sensing circuit including NMOS transistors having different lengths of channels, and configured to output a second sensing signal of which a second frequency is adjusted according to a current generated by the NMOS transistors, the second sensing circuit including second booster comprising the NMOS transistors having the different lengths of channels.
An electronic system comprising:
- a booster including first and second transistors of a same conductivity type coupled in series between a power voltage terminal and a ground terminal and configured to output, through a first node, a sensing voltage corresponding to characteristics of the first and second transistors;
- and
- an oscillator including a plurality of stages in a ring structure and configured to output a sensing signal through a second node in response to the sensing voltage, a frequency of the sensing signal being adjusted in proportion to the sensing voltage,
- wherein each of the plurality of stages incudes a pair of a third transistor and an inverter coupled in series between the power voltage terminal and the ground terminal, and
- wherein the first transistor has a first size, the second transistor has a second size greater than the first size, the third transistor of each of the plurality of stages has a third size greater than the first size, and each of the first to third size indicates a length of a channel formed between two adjacent junction regions in a substrate.
Dependencies are inferred from the claim text.