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US 11,977,282 B2Granted
Optical modulator
AssigneeNippon Telegraph and Telephone Corporation
InventorsTatsuro Hiraki, Shinji Matsuo, Tai Tsuchizawa
Life of this patent
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Abstract
A core, constituted by an amorphous undoped semiconductor (i type), which is formed on a lower clad layer, and a p-type layer and an n-type layer which are disposed on the lower clad layer with the core interposed therebetween and are formed in contact with the core are provided. The core is formed to be thicker than the p-type layer and the n-type layer. The p-type layer and the n-type layer are constituted by single crystal silicon.
Claims10
An optical modulator comprising:
- a core, wherein the core is constituted by an amorphous semiconductor on a clad layer;
- a p-type layer and an n-type layer on the clad layer with the core interposed therebetween, wherein the p-type layer and the n-type layer contact the core, and wherein the p-type layer and the n-type layer are constituted by single crystal silicon;
- and
- a second optical waveguide configured to be optically connected to a first optical waveguide constituted by the core, wherein a second core constituting the second optical waveguide is constituted by a silicon layer that is continuous with the p-type layer and the n-type layer.
1 more element
A method comprising:
- providing a core, wherein the core is constituted by an amorphous semiconductor on a clad layer;
- and
- forming a p-type layer and an n-type layer on the clad layer with the core interposed therebetween, wherein the p-type layer and the n-type layer contact the core, and wherein the p-type layer and the n-type layer are constituted by single crystal silicon;
- and
- providing a second optical waveguide configured to be optically connected to a first optical waveguide constituted by the core, wherein a second core constituting the second optical waveguide is constituted by a silicon layer that is continuous with the p-type layer and the n-type layer.
2 more elements
Dependencies are inferred from the claim text.