Solid-state imaging element and electronic device

An electronic apparatus, comprising:

• an imaging device, including:
• a substrate;
• a first pixel, a second pixel, a third pixel, a fourth pixel, and a fifth pixel, each pixel including:
• a photoelectric conversion film region disposed above the substrate;
• a first photoelectric conversion element, wherein the first photoelectric conversion element is formed in the substrate;
• a second photoelectric conversion element, wherein the second photoelectric conversion element is formed in the substrate;
• and
• a vertical transistor for the first photoelectric conversion element;
• a first floating diffusion, wherein a portion of the first photoelectric conversion element of the first pixel is formed between a light incident surface of the substrate and the vertical transistor of the first pixel, wherein a portion of the first photoelectric conversion element of the second pixel is formed between the light incident surface of the substrate and the vertical transistor of the second pixel, and wherein the first floating diffusion is shared by the first photoelectric conversion element of the first pixel, the second pixel, the fourth pixel, and the fifth pixel;
• a second floating diffusion, wherein the second floating diffusion is between the second photoelectric conversion element of the second pixel and the second photoelectric conversion element of the third pixel, and wherein the second floating diffusion is shared by the second photoelectric conversion element of the second pixel and the second photoelectric conversion element of the third pixel;
• and
• a controller, wherein the controller controls operation of the imaging device.