US 11,971,659 B2 · Photoresist composition and method of forming photoresist pattern

Abstract

A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.

Claims20

Dependent claims

A method of forming a pattern in a photoresist, comprising:

forming a photoresist composition layer over a substrate;
selectively exposing the photoresist layer to actinic radiation to form a latent pattern;
and
developing the latent pattern by applying a developer to the selectively exposed photoresist layer to form a pattern,
wherein the photoresist composition comprises:
a conjugated resist additive;
a photoactive compound;
and
a polymer resin,
wherein the conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline,
wherein the polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, polyphenylene, and polyaniline are substituted with one or more substituents selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group,
an alcohol group, an amine group, a carboxylic acid group, and an amide group, and
wherein the conjugated resist additive includes a conjugated moiety attached to either a photobase generator or triphenylsulfonium hydroxide.

10 more elements

A method of forming a pattern in a photoresist, comprising:

forming a photoresist composition layer over a substrate;
selectively exposing the photoresist layer to actinic radiation to form a latent pattern;
and
developing the latent pattern by applying a developer to the selectively exposed photoresist layer to form a pattern,
wherein the photoresist composition comprises:
a polymer resin having a first conjugated moiety;
and
a photoacid generator attached to a second conjugated moiety,
wherein the first conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polyphenylenevinylene, a polyfluorene, and a polyphenylene, and
the second conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, and a polyaniline.

7 more elements

Dependencies are inferred from the claim text.

Photoresist composition and method of forming photoresist pattern

Life of this patent

Photoresist composition and method of forming photoresist pattern

Life of this patent

Abstract

Claims20