Method for manufacturing a silicon-based coriolis-force-based flow sensing device, coriolis-force-based flow sensing device, and system for measuring a property of a fluid

A system for measuring a property of a fluid, comprising:

• a Coriolis-force-based flow sensing device that includes:
• a substrate;
• an insulating layer on a surface of the substrate;
• at least one driving electrode on the insulating layer,
• a structural body partially overlapping the driving electrode, the structural body having a buried channel, the buried channel having a first side and a second side opposite to the first side, the first side of the buried channel being closer to the substrate than the second side of the buried channel, the driving electrode and the structural body being coupled together, the structural body forming a chamber between the buried channel and the substrate, the driving electrode being in the chamber;
• a porous layer that partially delimits the second side of the buried channel;
• a fluid-input port and a fluid-output port in fluid communication with the buried channel;
• a fluid-recirculating device fluidically connected to the fluid-input port and the fluid-output port, the fluid-recirculating device configured to cause a fluid to flow through the buried channel;
• driving circuitry configured to bias the driving electrode with respect to the structural body to vibrate the structural body when the fluid flows through the buried channel;
• and
• a sensor configured to sense a vibration of the structural body.

A Coriolis-force-based flow sensing device, comprising:

• a substrate including a first surface;
• an insulating layer on the first surface of the substrate;
• at least one driving electrode on the insulating layer;
• and
• a structural body including:
• a second surface opposite to a third surface, the third surface facing the first surface of the substrate;
• a suspended portion that overlaps and is suspended over the driving electrode;
• a buried channel within the suspended portion, the buried channel being between the second surface and the third surface;
• a first structural layer on the insulating layer;
• a second structural layer on the first structural layer, the second structural layer including a plurality of apertures that extend through the second structural layer;
• and
• a porous layer on the second structural layer and in the plurality of apertures, the porous layer at least partially delimiting the buried channel, and the porous layer including pores permeable to an etching fluid;
• and
• a chamber in the structural body at the third surface, the chamber being between the structural body and the first surface of the substrate, the at least one driving electrode being in the chamber.