Power rail and signal conducting line arrangement

An integrated circuit comprising:

• a first-voltage power rail extending in a second direction that is perpendicular to a first direction, the first-voltage power rail being in a first connection layer;
• a first-voltage underlayer power rail below the first connection layer and extending in the first direction;
• a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail;
• a first semiconductor structure having a source region of a first-type transistor therein conductively connected to the first-voltage underlayer power rail, the first semiconductor structure underneath the first connection layer;
• a second semiconductor structure having a source region of a second-type transistor underneath the first connection layer;
• a first signal conducting line extending in the second direction and in the first connection layer;
• a gate-conductor extending in the second direction, the gate-conductor intersects either the first semiconductor structure or the second semiconductor structure at a channel region;
• and
• a gate via-connector directly connecting the gate-conductor with the first signal conducting line.

An integrated circuit comprising:

• a first-voltage power rail extending in a second direction that is perpendicular to a first direction, the first-voltage power rail being in a first connection layer;
• a first-voltage underlayer power rail below the first connection layer and extending in the first direction;
• a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail;
• a first semiconductor structure having a source region of a first-type transistor therein conductively connected to the first-voltage underlayer power rail, the first semiconductor structure underneath the first connection layer;
• a second semiconductor structure having a source region of a second-type transistor underneath the first connection layer;
• a first signal conducting line extending in the second direction and in the first connection layer;
• a first terminal-conductor intersecting the first semiconductor structure at a drain region of the first-type transistor or intersecting the second semiconductor structure at a drain region of the second-type transistor;
• and
• a terminal via-connector directly connecting the first terminal-conductor with the first signal conducting line.