Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing semiconductor processing material, and semiconductor device

A composition for forming a film for semiconductor devices, comprising:

• a compound (A) including a Si—O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom, and having a weight average molecular weight of from 130 to 10,000;
• a crosslinking agent (B) which includes three or more —C(═O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in a molecule, wherein from one to six of the three or more —C(═O)OX groups are —C(═O)OH groups, and wherein in the three or more —C(═O)OX groups, at least one X is an alkyl group having from 1 to 6 carbon atoms, the crosslinking agent (B) having a weight average molecular weight of from 200 to 600;
• and
• a polar solvent (D).