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US 11,963,466 B2Granted
Switch device and method for manufacturing a switch device
AssigneeInfineon Technologies AG
InventorsDominik Heiss, Christoph Kadow, Matthias Markert
Life of this patent
Estimating the term…
Abstract
A switch device including a semiconductor substrate is provided. A trench is formed in the substrate, and a phase change material is provided at least partially in the trench. A heater for heating the phase change material is also provided.
Claims21
A switch device, comprising:
- a substrate;
- a trench formed in the substrate;
- a phase change material disposed at least partially in the trench;
- a heater configured to heat the phase change material;
- first contact pads configured to contact the phase change material;
- and
- second contact pads arranged to contact the heater,
- wherein the trench has a length direction having a length, a width direction having a width smaller than the length and a depth direction.
5 more elements
A method for manufacturing a switch device, the method comprising:
- providing a substrate;
- forming a trench in the substrate;
- providing a phase change material in the trench;
- providing a heater configured to heat the phase change material;
- arranging first contact pads to contact the phase change material;
- and
- arranging second contact pads to contact the heater,
- wherein the trench has a length direction having a length, a width direction having a width smaller than the length and a depth direction.
5 more elements
A switch device, comprising:
- a substrate;
- a trench formed in the substrate;
- a phase change material disposed at least partially in the trench;
- a heater configured to heat the phase change material;
- a thermal buffer layer arranged between the phase change material and the trench;
- and/or
- a barrier layer between the phase change material and the heater.
4 more elements
A method for manufacturing a switch device, the method comprising:
- providing a substrate;
- forming a trench in the substrate;
- providing a phase change material in the trench;
- providing a heater configured to heat the phase change material;
- arranging a thermal buffer layer between the phase change material and the trench;
- and/or
- forming a barrier layer between the phase change material and the heater.
4 more elements
A switch device, comprising:
- a substrate;
- a trench formed in the substrate;
- a phase change material disposed at least partially in the trench;
- and
- a heater configured to heat the phase change material,
- wherein the trench has a width, a length and a depth, wherein the width is smaller than the length, and wherein an aspect ratio of width to depth for the trench is between 5:1 and 1:1.
3 more elements
A switch device, comprising:
- a substrate;
- a trench formed in the substrate;
- a phase change material disposed at least partially in the trench;
- and
- a heater configured to heat the phase change material,
- wherein the phase change material surrounds the heater on at least two sides of the heater in at least one cross-section of the switch device.
3 more elements
Dependencies are inferred from the claim text.