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US 11,963,465 B2Granted
Non-volatile memory structure with positioned doping
AssigneeHefei Reliance Memory Limited
InventorsZhichao Lu, Gary Bela Bronner
Life of this patent
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Abstract
Disclosed is a resistive random access memory (RRAM). The RRAM includes a bottom electrode made of tungsten and a switching layer made of hafnium oxide disposed above the bottom electrode, wherein the switching layer includes a filament and one or more lateral regions including a doping material that are between a top region and a bottom region of the switching layer. The RRAM further includes a top electrode disposed above the switching layer.
Claims18
A method of forming a non-volatile memory structure, the method comprising:
- disposing a bottom region of a switching layer;
- disposing one or more lateral regions of the switching layer above the bottom region of the switching layer, the one or more lateral regions of the switching layer including a doping material;
- disposing a top region of a switching layer above the one or more lateral regions of the switching layer;
- and
- forming a filament in the switching layer between the top region of the switching layer and the bottom region of the switching layer.
2 more elements
Dependencies are inferred from the claim text.