Magneto-resistive random access memory magnetic tunnel junction and cell with voltage-controlled writing

A device comprising:

• a magnetic tunnel junction (MTJ) element, the MTJ element comprising a free layer structure, a free/pinned layer structure, and a tunnel barrier structure between the free layer structure and the free/pinned layer structure;
• a first electrode coupled to the free layer structure, the first electrode connected to a first node and a second node, the first node configured to receive a voltage from a voltage source, and the second node configured to receive a charge current from a current or voltage source;
• a second electrode coupled to the free/pinned layer structure, the second electrode connected to a third node configured as a return for the first node and/or the second node;
• and
• processing circuitry operatively coupled to the MTJ element, the processing circuitry configured to:
• apply a voltage to the MTJ element through the first node to modulate magnetic anisotropy in the free layer structure using an electric field, to enable writing with reduced write currents;
• issue a charge current to the MTJ element through the second node to induce spin-dependent writing and/or magnetic spin accumulation in the free layer structure to set a bit state of the MTJ element, using spin-transfer torque into the free layer structure;
• and
• remove the voltage from the MTJ element that modulates the magnetic anisotropy, to perform a write operation.