Display device having a light-blocking material in an insulating layer between a transistor and a light-emitting element and manufacturing method thereof

A display device, comprising:

• a first substrate;
• a capacitive element disposed on the first substrate;
• an interlayer insulating layer disposed between a pair of capacitive plates of the capacitive element;
• a transistor disposed on the first substrate;
• a light-emitting element connected to the transistor;
• an insulating layer disposed between the transistor and the light-emitting element, the insulating layer separating the interlayer insulating layer from the light-emitting element;
• a second substrate at least partially overlapping the first substrate;
• and
• a color conversion layer disposed on the second substrate,
• wherein the insulating layer includes a first insulating layer and a second insulating layer,
• wherein a distance between the first insulating layer and the first substrate is less than a distance between the second insulating layer and the first substrate,
• wherein the first insulating layer includes a light blocking material,
• wherein the first insulating layer including the light blocking material is disposed between the color conversion layer and the first substrate;
• wherein the transistor includes a source electrode and a drain electrode, and
• wherein the first insulating layer, including the light blocking material, directly contacts a top surface of and a plurality of side surfaces of each of the source electrode, the drain electrode, and one of the capacitive plates of the capacitive element,
• wherein the one of the capacitive plates is physically and directly connected to the source electrode, in a region not overlapping the light emitting element, by a common power line,
• wherein the thickness of the first insulating layer is within a range of 2 μm to 4 μm, and the thickness of the second insulating layer is within a range of 2 μm to 4 μm,
• wherein the thickness of the insulating layer is within a range of 4 μm to 8 μm, and
• wherein the interlayer insulating layer is spaced apart from the light-emitting element by 4 μm to 8 μm.