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US 11,963,374 B2Granted
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama, Kiyoshi Kato
Life of this patent
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Abstract
An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.
Claims15
A semiconductor device comprising:
- a first transistor;
- and
- a second transistor,
- wherein a channel formation region of the first transistor comprises silicon,
- wherein a channel formation region of the second transistor comprises an oxide semiconductor,
- wherein a first insulating layer is provided over the channel formation region of the first transistor,
- wherein a first gate electrode of the first transistor is provided over the first insulating layer,
- wherein the first gate electrode of the first transistor is electrically connected to one of a source and a drain of the second transistor via a first opening in a second insulating layer, a second opening in a third insulating layer, a third opening in a fourth insulating layer, a fourth opening in a fifth insulating layer, a fifth opening in the fifth insulating layer, and a sixth opening in the fourth insulating layer,
- wherein the one of the source and the drain of the second transistor is in contact with a top surface of a layer which comprises the oxide semiconductor,
- wherein a second gate electrode of the second transistor is provided below the channel formation region of the second transistor, and
- wherein, in a cross-sectional view, the layer which comprises the oxide semiconductor extends beyond an end portion of the second gate electrode.
8 more elements
A semiconductor device comprising:
- a first transistor;
- and
- a second transistor,
- wherein a channel formation region of the first transistor comprises silicon,
- wherein a channel formation region of the second transistor comprises an oxide semiconductor,
- wherein a first insulating layer is provided over the channel formation region of the first transistor,
- wherein a first gate electrode of the first transistor is provided over the first insulating layer,
- wherein the first gate electrode of the first transistor is electrically connected to one of a source and a drain of the second transistor,
- wherein the one of the source and the drain of the second transistor is in contact with a top surface of a layer which comprises the oxide semiconductor,
- wherein a second gate electrode of the second transistor is provided below the channel formation region of the second transistor, and
- wherein, in a cross-sectional view, the layer which comprises the oxide semiconductor extends beyond an end portion of the second gate electrode.
8 more elements
A semiconductor device comprising:
- a first transistor;
- and
- a second transistor,
- wherein a channel formation region of the first transistor comprises silicon,
- wherein a channel formation region of the second transistor comprises an oxide semiconductor,
- wherein a first insulating layer is provided over the channel formation region of the first transistor,
- wherein a first gate electrode of the first transistor is provided over the first insulating layer,
- wherein the first gate electrode of the first transistor is electrically connected to one of a source and a drain of the second transistor,
- wherein a second insulating layer is in contact with a side surface of a layer which comprises the oxide semiconductor and a top surface of the layer which comprises the oxide semiconductor,
- wherein a first opening and a second opening are provided in the second insulating layer,
- wherein a second gate electrode of the second transistor is provided below the channel formation region of the second transistor, and
- wherein, in a cross-sectional view, the layer which comprises the oxide semiconductor extends beyond an end portion of the second gate electrode.
9 more elements
A semiconductor device comprising:
- a first transistor;
- and
- a second transistor,
- wherein a channel formation region of the first transistor comprises silicon,
- wherein a channel formation region of the second transistor comprises an oxide semiconductor,
- wherein a first insulating layer is provided over the channel formation region of the first transistor,
- wherein a first gate electrode of the first transistor is provided over the first insulating layer,
- wherein the first gate electrode of the first transistor is electrically connected to one of a source and a drain of the second transistor via a first opening in a second insulating layer, a second opening in a third insulating layer, a third opening in a fourth insulating layer, a fourth opening in a fifth insulating layer, a fifth opening in the fifth insulating layer, and a sixth opening in the fourth insulating layer,
- wherein the fourth insulating layer is in contact with a side surface of a layer which comprises the oxide semiconductor and a top surface of the layer which comprises the oxide semiconductor,
- wherein a second gate electrode of the second transistor is provided below the channel formation region of the second transistor, and
- wherein, in a cross-sectional view, the layer which comprises the oxide semiconductor extends beyond an end portion of the second gate electrode.
8 more elements
Dependencies are inferred from the claim text.