Nonvolatile semiconductor memory device and fabrication method of the nonvolatile semiconductor memory device

A fabrication method of a nonvolatile semiconductor memory device, the fabrication method comprising:

• after pattern-forming a first wiring layer on a substrate, forming a first interlayer insulating film to be planarized and then forming a stacked film on the first wiring layer and the first interlayer insulating film;
• processing the stacked film on the first wiring layer of a memory cell formation region in a fin shape to be extended in a first direction, and processing the stacked film of a stacked structure formation region into an island shape;
• forming a second interlayer insulating film to be planarized;
• after forming a metal layer, processing the metal layer in a line shape to be extended in the second direction crossing the first direction, thereby forming a second wiring layer to be overlapped on the stacked film of the stacked structure formation region;
• and
• processing the stacked film and the second interlayer insulating film under between the second wiring layers, thereby forming a memory cell having a pillar-shaped stacked film in the memory cell formation region and forming a stacked structure having a pillar-shaped stacked film in the stacked structure formation region, wherein
• the pattern-forming the first wiring layer includes simultaneously pattern-forming a first conductive layer, the first conductive layer provided in the same layer as the first wiring layer in the third direction, the first conductive layer arranged to be adjacent to the first wiring layer in the second direction, the first conductive layer not connected to other than the second wiring layer,
• the forming the stacked film includes simultaneously forming the stacked film on the first conductive layer, and
• the processing the stacked film on the first wiring layer in the fin shape to be extended in the first direction includes simultaneously processing the stacked film on the first conductive layer into an island shape.

A nonvolatile semiconductor memory device comprising:

• a first memory cell array provided with a plurality of first wiring layers extended to a first direction and arranged in a second direction crossing the first direction, a plurality of second wiring layers extended to the second direction and arranged in the first direction, and a plurality of first stacked structures including a first memory cell provided between the first wiring layer and the second wiring layer;
• a plurality of first conductive layers provided in the same layer as the first wiring layer in a third direction crossing the first direction and the second direction and disposed to be adjacent to the first wiring layer in the second direction;
• a plurality of second stacked structures including the plurality of the first conductive layers and the second wiring layers;
• and
• an insulation layer provided between the plurality of first stacked structures and between the plurality of second stacked structures, wherein
• the second stacked structure has a Young's modulus larger than a Young's modulus of the insulation layer.