Memory array with asymmetric bit-line architecture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Li Chiang, Chao-Ching Cheng, Jung-Piao Chiu, Tzu-Chiang Chen, Yu-Sheng Chen
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Li Chiang, Chao-Ching Cheng, Jung-Piao Chiu, Tzu-Chiang Chen, Yu-Sheng Chen
Estimating the term…
The present disclosure relates to an integrated circuit. The integrated circuit has a plurality of bit-line stacks disposed over a substrate and respectively including a plurality of bit-lines stacked onto one another. A data storage structure is over the plurality of bit-line stacks and a selector is over the data storage structure. A word-line is over the selector. The selector is configured to selectively allow current to pass between the plurality of bit-lines and the word-line. The plurality of bit-line stacks include a first bit-line stack, a second bit-line stack, and a third bit-line stack. The first and third bit-line stacks are closest bit-line stacks to opposing sides of the second bit-line stack. The second bit-line stack is separated from the first bit-line stack by a first distance and is further separated from the third bit-line stack by a second distance larger than the first distance.
An integrated circuit, comprising:
An integrated circuit, comprising:
An integrated circuit, comprising:
Dependencies are inferred from the claim text.