Magnetic device and magnetic random access memory
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWilman Tsai, Shy-Jay Lin, Mingyuan Song
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Abstract
A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. A diffusion barrier layer for suppressing metal elements of the first magnetic layer from diffusing into the bottom metal layer is disposed between the bottom metal layer and the first magnetic layer.
Claims20
A magnetic random access memory (MRAM), comprising:
- a bottom metal layer;
- a first magnetic layer disposed over the bottom metal layer;
- a spacer layer disposed over the first magnetic layer;
- a second magnetic layer disposed over the spacer layer;
- a diffusion barrier layer disposed between the bottom metal layer and the first magnetic layer;
- and
- a magnetic dead layer disposed between the diffusion barrier layer and the bottom metal layer and in direct contact with the diffusion barrier layer.
A magnetic random access memory (MRAM), comprising:
- a support layer;
- a bottom metal layer disposed over the support layer;
- a first magnetic layer disposed over the bottom metal layer;
- a spacer layer disposed over the first magnetic layer;
- a second magnetic layer disposed over the spacer layer;
- a layer made of one of magnesium, tungsten oxide, tantalum or tantalum oxide disposed between and in direct contact with the bottom metal layer and the first magnetic layer.
A method of manufacturing a spin-orbit-torque (SOT) magnetic device, the method comprising:
- forming a diffusion barrier layer over a bottom metal layer;
- forming a first magnetic layer over the diffusion barrier layer;
- forming a spacer layer over the first magnetic layer;
- and
- forming a second magnetic layer over the spacer layer,
- wherein the diffusion barrier layer includes an oxide by directly oxidizing the bottom metal layer.
Dependencies are inferred from the claim text.