Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Tomoaki Atsumi, Yuta Endo
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Abstract
A highly integrated semiconductor device is provided. The semiconductor device includes a substrate, a prism-like insulator, a memory cell string including a plurality of transistors connected in series. The prism-like insulator is provided over the substrate. The memory cell string is provided on the side surface of the prism-like insulator. The plurality of transistors each include a gate insulator and a gate electrode. The gate insulator includes a first insulator, a second insulator, and a charge accumulation layer. The charge accumulation layer is positioned between the first insulator and the second insulator.
Claims6
A semiconductor device comprising:
- a substrate;
- a first insulator;
- a first conductor over the first insulator;
- a second conductor over the first insulator;
- an oxide semiconductor over and in contact with the first conductor and the second conductor;
- a first gate insulator including a region facing a side of the oxide semiconductor;
- a first gate electrode including a region facing the side of the oxide semiconductor with the first gate insulator therebetween;
- a second gate insulator including a region facing the side of the oxide semiconductor;
- a second gate electrode including a region facing the side of the oxide semiconductor with the second gate insulator therebetween;
- a third conductor over and in contact with the oxide semiconductor;
- a fourth conductor over and in contact with the oxide semiconductor;
- and
- a fifth conductor over and in contact with the third conductor and the fourth conductor,
- wherein the second gate electrode is over the first gate electrode.
Dependencies are inferred from the claim text.