Semiconductor device and operation method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHitoshi Kunitake, Ryunosuke Honda, Tomoaki Atsumi
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHitoshi Kunitake, Ryunosuke Honda, Tomoaki Atsumi
Estimating the term…
A semiconductor device capable of obtaining the threshold voltage of a transistor is provided. The semiconductor device includes a first transistor, a first capacitor, a first output terminal, a first switch, and a second switch. A gate and a source of the first transistor are electrically connected to each other. A first terminal of the first capacitor is electrically connected to the source. A second terminal and the first output terminal of the first capacitor are electrically connected to a back gate of the first transistor. The first switch controls input of a first voltage to the back gate. A second voltage is input to a drain of the first transistor. The second switch controls input of a third voltage to the source.
A method for operating a semiconductor device comprising a first transistor, a first capacitor, a first output terminal, a first switch, and a second switch,
A method for operating a semiconductor device comprising a first transistor, a first capacitor, a first output terminal, a first switch, a second switch, a second capacitor, a current-voltage converter circuit, and an amplifier circuit,
Dependencies are inferred from the claim text.