Solid-state image sensor
AssigneeSony Semiconductor Solutions Corporation
InventorsTakashi Moue, Yosuke Ueno
Life of this patent
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Abstract
A solid-state image sensor includes: an input transistor configured to output, from a drain, a drain voltage according to an input voltage input to a source in a case where the input voltage substantially coincides with a predetermined reference voltage input to a gate; and an output transistor configured to output a signal indicating whether or not a difference between the input voltage input to a source and the drain voltage input to a gate exceeds a predetermined threshold voltage as a comparison result between the input voltage and the reference voltage.
Claims27
An imaging device comprising:
- a pixel circuit configured to output a pixel signal;
- a pixel signal line coupled to the pixel circuit;
- a reference signal generation circuit configured to output a reference signal;
- and
- a comparator including:
- a first transistor, wherein a first terminal of the first transistor is coupled to the reference signal generation circuit and a second terminal of the first transistor is coupled to the pixel signal line, and
- a second transistor, wherein a first terminal of the second transistor is coupled to a drain of the first transistor and a second terminal of the second transistor is electrically connected to the pixel signal line.
A comparator comprising:
- a first input configured to receive a pixel signal;
- a second input configured to receive a reference signal;
- a first transistor, wherein a first terminal of the first transistor is coupled to the reference signal generation circuit and a second terminal of the first transistor is coupled to the first input;
- and
- a second transistor, wherein a first terminal of the second transistor is coupled to a drain of the first transistor and a second terminal of the second transistor is electrically connected to the first input.
Dependencies are inferred from the claim text.