Image sensor and electronic apparatus
AssigneeSony Group Corporation
InventorMasashi Nakata
Life of this patent
Estimating the term…
Abstract
The present technology relates to an image sensor and an electronic apparatus which enable higher-quality images to be obtained. Provided is an image sensor including a plurality of pixels, each pixel including one on-chip lens, and a plurality of photoelectric conversion layers formed below the on-chip lens. Each of at least two of the plurality of photoelectric conversion layers is split, partially formed, or partially shielded from light with respect to a light-receiving surface. The pixels are phase difference detection pixels for performing AF by phase difference detection or imaging pixels for generating an image. The present technology can be applied to a CMOS image sensor, for example.
Claims20
A light detecting device, comprising:
- a semiconductor substrate;
- a first on-chip lens disposed above the semiconductor substrate;
- a second on-chip lens disposed above the semiconductor substrate;
- a first photoelectric conversion portion disposed between the first on-chip lens and the semiconductor substrate;
- a second photoelectric conversion portion disposed between the second on-chip lens and the semiconductor substrate;
- a first color filter disposed above the semiconductor substrate and disposed below the first photoelectric conversion portion;
- a second color filter disposed above the semiconductor substrate and disposed below the second photoelectric conversion portion;
- a first photoelectric conversion region disposed in the semiconductor substrate and disposed below the first color filter;
- and
- a second photoelectric conversion region disposed in the semiconductor substrate and disposed below the second color filter,
- wherein the light detecting device is configured to detect a phase difference from a first output of the first photoelectric conversion portion and a second output of the second photoelectric conversion portion.
A light detecting apparatus, comprising:
- a lens;
- and
- a light detecting device, comprising:
- a semiconductor substrate;
- a first on-chip lens disposed above the semiconductor substrate;
- a second on-chip lens disposed above the semiconductor substrate;
- a first photoelectric conversion portion disposed between the first on-chip lens and the semiconductor substrate;
- a second photoelectric conversion portion disposed between the second on-chip lens and the semiconductor substrate;
- a first color filter disposed above the semiconductor substrate and disposed below the first photoelectric conversion portion;
- a second color filter disposed above the semiconductor substrate and disposed below the second photoelectric conversion portion;
- a first photoelectric conversion region disposed in the semiconductor substrate and disposed below the first color filter;
- and
- a second photoelectric conversion region disposed in the semiconductor substrate and disposed below the second color filter,
- wherein the light detecting device is configured to detect a phase difference from a first output of the first photoelectric conversion portion and a second output of the second photoelectric conversion portion.
Dependencies are inferred from the claim text.