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US 11,961,945 B2Granted
Light emitting element, method of manufacturing the same, and display device including the light emitting element
AssigneeSamsung Display Co., Ltd.
InventorsJun Bo Sim, Chang Hee Lee, Yun Hyuk Ko, Sang Ho Jeon, Jae Kook Ha
Life of this patent
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Abstract
A light emitting element includes: a light emitting stack pattern including a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked along one direction; and an insulating film surrounding an outer surface of at least one of the first semiconductor layer, the active layer, and the second semiconductor layer. The insulating film including a zinc oxide (ZnO) thin film layer.
Claims16
A light emitting element comprising:
- a light emitting stack pattern comprising a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked along one direction;
- and
- an insulating film surrounding an outer surface of at least one of the first semiconductor layer, the active layer, and the second semiconductor layer,
- wherein the insulating film comprises a zinc oxide (ZnO) thin film layer, and
- wherein the insulating film is doped with at least one of Group III transition metals including yttrium (Y), scandium (Sc), lanthanum (La), actinium (Ac), lutetium (Lu), and lawrencium (Lr).
2 more elements
A display device comprising:
- a substrate;
- a first electrode and a second electrode, spaced from each other along a first direction on one surface of the substrate, the first electrode and the second electrode extending in a second direction different from the first direction;
- and
- a plurality of light emitting elements located between the first electrode and the second electrode, each of the plurality of light emitting elements comprising one end portion electrically connected to the first electrode and the other end portion electrically connected to the second electrode,
- wherein each of the light emitting elements comprises:
- a first semiconductor layer;
- an active layer on the first semiconductor layer;
- a second semiconductor layer on the active layer;
- and
- an insulating film surrounding an outer surface of at least one of the first semiconductor layer, the active layer, and the second semiconductor layer, and
- wherein the insulating film comprises a zinc oxide (ZnO) thin film layer doped with at least one of Group III transition metals including yttrium (Y), scandium (Sc), lanthanum (La), actinium (Ac), lutetium (Lu) ruthcnium (Ru), and lawrencium (Lr).
8 more elements
Dependencies are inferred from the claim text.