Semiconductor device and manufacturing method thereof

A semiconductor device, comprising:

• a semiconductor substrate;
• a complementary metal-oxide-semiconductor (CMOS) circuit, formed on the semiconductor substrate;
• and
• image sensors, coupled to the CMOS circuit from above the CMOS circuit, and comprising an array of transparent conductive patterns each located within a pixel region, wherein the transparent conductive patterns are formed of a metal oxide material, and two crystalline phases different with each other in terms of prefer growth plane and oxygen vacancy content coexist in the metal oxide material.

A manufacturing method of a semiconductor device, comprising:

• forming transistors on a semiconductor substrate;
• forming an interconnection structure over the transistors, wherein the interconnection structure comprises a stack of dielectric layers and conductive features spreading in the stack of dielectric layers;
• using a sputtering apparatus to deposit a transparent conductive layer on the interconnection structure, wherein the transparent conductive layer is deposited while the semiconductor substrate is heated by a temperature control system connected to a workpiece holder holding the semiconductor substrate, such that the transparent conductive layer formed of a metal oxide material has two crystalline phases different with each other in terms of prefer growth plane and oxygen vacancy content;
• and
• patterning the transparent conductive layer into an array of transparent conductive patterns.