Light emitting semiconductor device for enhancing light extraction efficiency
AssigneeSuzhou Lekin Semiconductor Co., Ltd.
InventorsYoun Joon Sung, Min Sung Kim, Eun Dk Lee
Life of this patent
Estimating the term…
Loading patent…
AssigneeSuzhou Lekin Semiconductor Co., Ltd.
InventorsYoun Joon Sung, Min Sung Kim, Eun Dk Lee
Estimating the term…
A semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer; a first electrode provided on a first surface of the first semiconductor layer; a second electrode provided on a first surface of the second semiconductor layer, the active layer being provided between the first surface of the first semiconductor layer and a second surface of the second semiconductor layer that is opposite to the first surface of the second semiconductor layer; a first insulation layer provided on the first surface of the first semiconductor layer, the first surface of the second semiconductor layer, and a side surface of the active layer; a first cover electrode provided on the first electrode; a second cover electrode provided on the second electrode, a second insulation layer provided on the first cover electrode, the second cover electrode, and the first insulation layer, wherein: the second insulation layer includes a first opening over the first cover electrode and a second opening over the second cover electrode, and a plan view of the semiconductor includes a light emitting region that includes a surface of the second cover electrode in the second opening of the second insulation layer, and a non-light emitting region that includes a surface of the first cover electrode in the second opening of the first insulation layer, and a first area of the non-light emitting region is smaller than a second area of the light emitting region.
A semiconductor device comprising:
Dependencies are inferred from the claim text.