Optoelectronic device with PN junction and trench gate

Optoelectronic device comprising:

• a vertical stack of a first doped semiconductor layer of a first conductivity type, of a second doped semiconductor layer of a second conductivity type forming with the first doped semiconductor layer a PN junction, and of a third conductive layer arranged on top of and in contact with a surface of the second doped semiconductor layer opposite to the first doped semiconductor layer;
• a peripheral trench crossing the third conductive layer and the second doped semiconductor layer, said peripheral trench laterally delimiting a portion of the third conductive layer and a portion of the second doped semiconductor layer;
• in said peripheral trench, a conductive spacer made of metal and in contact with a lateral side of said portion of the third conductive layer;
• and
• in said peripheral trench, an insulated conductive gate comprising a gate insulator layer extending on top of and in contact with a lateral side of the conductive spacer and on top of and in contact with a lateral side of said portion of the second doped semiconductor layer, and a conductive gate layer arranged on top of and in contact with a surface of the gate insulator layer opposite to the conductive spacer and to said portion of the second doped semiconductor layer.