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AssigneeUniversity of Science and Technology Beijing
InventorsYinghui Sun, Bingxu Liu, Rongming Wang
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In the field of photoelectric devices, a visible light detector is provided with high-photoresponse based on a TiO2/MoS2 heterojunction and a preparation method thereof. The detector, based on a back-gated field-effect transistor based on MoS2, includes a MoS2 channel, a TiO2 modification layer, a SiO2 dielectric layer, Au source/drain electrodes and a Si gate electrode, The TiO2 modification layer is modified on the surface of the MoS2 channel. By employing micromechanical exfoliation and site-specific transfer of electrodes, the method is intended to prepare a detector by constructing a back-gated few-layer field-effect transistor based on MoS2, depositing Ti on the channel surface, and natural oxidation.
A visible light detector with photoresponse based on a TiO2/MoS2 heterojunction, comprising a MoS2 channel, a TiO2 modification layer, a SiO2 dielectric layer, Au source/drain electrodes and a Si gate electrode, the TiO2 modification layer being modified on the surface of the MoS2 channel, the TiO2 modification layer being obtained from e-beam evaporation of a certain thickness of metallic Ti film on the surface of the MoS2 channel and natural oxidation of the metallic Ti film, and the MoS2 channel being a few layers of MoS2 flakes with a crystallinity.
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