Crystalline silicon solar cell and preparation method therefor, and photovoltaic assembly

A crystalline silicon solar cell, including:

• a crystalline silicon substrate,
• a passivation layer that is provided on one side of said crystalline silicon substrate and has a through hole,
• a carrier collection layer that is provided on said passivation layer and has a first region and a second region having opposite conductivity types,
• a first electrode that is in contact with the first region of said carrier collection layer,
• a second electrode that is in contact with the second region of said carrier collection layer, and,
• a doped layer that is provided on the other side of said crystalline silicon substrate;
• wherein, said carrier collection layer comes into contact with said crystalline silicon substrate via the through hole on said passivation layer;
• said doped layer has a conductivity type same as the conductivity type of said crystalline silicon substrate,
• wherein said first electrode has a portion corresponding to the through hole on said passivation layer and the portion of the first electrode corresponding to the through hole is located inside the through hole, and wherein there is a certain distance between the end of the portion of the first electrode located inside the through hole and the crystalline silicon substrate;
• and
• the certain distance is less than the depth of the through hole.

A crystalline silicon solar cell, including:

• a crystalline silicon substrate,
• a passivation layer that is provided on a side of said crystalline silicon substrate and has a through hole,
• a carrier collection layer that is provided on said passivation layer;
• an electrode that is in contact with said carrier collection layer;
• a doped layer that is provided on the other side of said crystalline silicon substrate;
• and,
• a second electrode that is in contact with said doped layer,
• wherein, said carrier collection layer has a conductivity type that is opposite to that of said doped layer,
• wherein, said carrier collection layer comes into contact with the crystalline silicon substrate via the through hole on said passivation layer,
• wherein said electrode has a portion corresponding to the through hole on said passivation layer and the portion of said electrode corresponding to the through hole is located inside the through hole, and wherein there is a certain distance between the end of the portion of said electrode located inside the through hole and the crystalline silicon substrate;
• and
• the certain distance is less than the depth of the through hole.