Engineered nanostructured passivated contacts and method of making the same

A double-side device comprising, in order:

• a first silicon layer comprising n-doped polycrystalline silicon;
• a first silicon oxide layer having a first thickness;
• a second silicon layer comprising n-type crystalline silicon and having a first textured surface and a second textured surface;
• a second silicon oxide layer having a second thickness;
• and
• a third silicon layer comprising p-doped polycrystalline silicon, wherein:
• a first plurality of conductive pathways comprising the n-doped polycrystalline silicon pass through the first thickness,
• a second plurality of conductive pathways comprising the p-doped polycrystalline silicon pass through the second thickness,
• the n-doped polycrystalline silicon penetrates into the second silicon layer forming a first plurality of penetrating regions within the second silicon layer, and
• the p-doped polycrystalline silicon penetrates into the second silicon layer forming a second plurality of penetrating regions within the second silicon layer.