Semiconductor device structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Cheng Chiang, Shi-Ning Ju, Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a source/drain feature on a semiconductor fin structure, a first isolation structure surrounding the semiconductor fin structure, source/drain spacers on the first isolation structure and surrounding a lower portion of the source/drain feature, a dielectric fin structure adjoining and in direct contact with the first isolation structure and one of the source/drain spacers, and an interlayer dielectric layer over the source/drain spacers and the dielectric fin structure and surrounding an upper portion of the source/drain feature.
Claims20
A semiconductor device structure, comprising:
- a source/drain feature on a semiconductor fin structure;
- a first isolation structure surrounding the semiconductor fin structure;
- source/drain spacers on the first isolation structure and surrounding a lower portion of the source/drain feature;
- dielectric fin structures partially embedded in the first isolation structure and surrounding the source/drain spacers;
- and
- an interlayer dielectric layer over the source/drain spacers and the dielectric fin structures and surrounding an upper portion of the source/drain feature.
A semiconductor device structure, comprising:
- a source/drain feature adjoining a plurality of nanowire structures;
- a gate stack wrapping the plurality of nanowire structures;
- a source/drain spacer alongside the source/drain feature;
- a gate spacer over the source/drain spacer and alongside an upper portion of the gate stack;
- and
- an interlayer dielectric layer over the source/drain feature, wherein the interlayer dielectric layer includes a portion extending into the source/drain spacer.
A method for forming a semiconductor device structure, comprising:
- forming a dielectric fin structure laterally spaced apart from a semiconductor fin structure;
- forming a protection layer on the dielectric fin structure;
- forming a dummy gate structure across the dielectric fin structure and the semiconductor fin structure;
- forming a source/drain spacer to fill a gap between the dielectric fin structure and the semiconductor fin structure;
- removing the protection layer, an upper portion of the source/drain spacer and an upper portion of the semiconductor fin structure to form a source/drain recess;
- and
- forming an epitaxial material in the source/drain recess.
Dependencies are inferred from the claim text.