Multi-metal lateral layer devices with internal bias generation
AssigneeApplied Materials, Inc.
InventorMilan Pe{hacek over (s)}ić
Life of this patent
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Abstract
A ferroelectric capacitor or a ferroelectric transistor may include a first metal layer having a first metal having a first work function, and a second metal layer having a second metal having a second work function. The capacitor may also include a a vertical electrode and a ferroelectric material that surrounds the vertical electrode and forms a plurality of switching regions in the ferroelectric material. The transistor may include a vertical channel, a vertical buffer layer that surround the vertical channel, and a ferroelectric material that surrounds the vertical buffer layer and forms a plurality of gate regions in the ferroelectric material.
Claims20
A ferroelectric capacitive device comprising:
- a plurality of metal layers comprising:
- a first metal layer comprising a first metal having a first work function;
- and
- a second metal layer comprising a second metal having a second work function that is different from the first work function, wherein the first metal layer is approximately parallel to the second metal layer;
- a vertical contact that contacts the first metal layer;
- a vertical electrode that is approximately perpendicular to the first metal layer and approximately perpendicular to the second metal layer;
- and
- a ferroelectric material that surrounds the vertical electrode and directly contacts the vertical electrode and directly contacts the plurality of metal layers to form the ferroelectric capacitive device with a plurality of switching regions in the ferroelectric material comprising:
- a first switching region between the vertical electrode and the first metal layer that switches in response to a voltage between the vertical electrode and the vertical contact;
- and
- a second switching region between the vertical electrode and the second metal layer that switches in response to the voltage between the vertical electrode and the vertical contact.
A method of fabricating a ferroelectric capacitive device, the method comprising:
- depositing a plurality of metal layers comprising:
- a first metal layer comprising a first metal having a first work function;
- and
- a second metal layer comprising a second metal having a second work function that is different from the first work function, wherein the first metal layer is approximately parallel to the second metal layer;
- etching a vertical hole in the plurality of metal layers;
- and
- filling the vertical hole with:
- a vertical electrode that is approximately perpendicular to the first metal layer and approximately perpendicular to the second metal layer;
- and
- a ferroelectric material that surrounds the vertical electrode and directly contacts the vertical electrode and directly contacts the plurality of metal layers to form the ferroelectric capacitive device with a plurality of switching regions in the ferroelectric material comprising:
- a first switching region between the vertical electrode and the first metal layer that switches in response to a voltage between the vertical electrode and a vertical contact that contacts the first metal layer;
- and
- a second switching region between the vertical electrode and the second metal layer that switches in response to the voltage between the vertical electrode and the vertical contact that contacts the first metal layer.
A ferroelectric transistor comprising:
- a plurality of metal layers comprising:
- a first metal layer comprising a first metal having a first work function;
- and
- a second metal layer comprising a second metal having a second work function that is different from the first work function, wherein the first metal layer is approximately parallel to the second metal layer;
- a vertical contact that contacts the first metal layer;
- a vertical channel that is approximately perpendicular to the first metal layer and approximately perpendicular to the second metal layer;
- a vertical buffer layer that surround the vertical channel;
- and
- a ferroelectric material that surrounds the vertical buffer layer and contacts the plurality of metal layers to form the ferroelectric transistor with a plurality of gate regions in the ferroelectric material comprising:
- a first gate region between the vertical channel and the first metal layer that switches in response to a voltage between the vertical channel and the vertical contact;
- and
- a second gate region between the vertical channel and the second metal layer that switches in response to the voltage between the vertical channel and the vertical contact.
Dependencies are inferred from the claim text.