Laterally-diffused metal-oxide semiconductor transistor and method therefor
AssigneeNXP USA, Inc.
InventorSaumitra Raj Mehrotra
Life of this patent
Estimating the term…
Abstract
A transistor includes a trench formed in a semiconductor substrate. A conductive spacer is formed in the trench and offset from a first sidewall of the trench. A dielectric material is formed in the trench and surrounds the conductive spacer. A drift region is formed in the semiconductor substrate adjacent to the first sidewall and a first portion of a second sidewall of the trench. A drain region is formed in the drift region adjacent to a second portion of the second sidewall. A first gate region overlaps a portion of the drift region and is formed separate from the conductive spacer.
Claims20
A transistor comprising:
- a trench formed in a semiconductor substrate;
- a conductive spacer formed in the trench, the conductive spacer offset from a first sidewall of the trench;
- a dielectric material formed in the trench, the dielectric material substantially surrounding the conductive spacer;
- a drift region formed in the semiconductor substrate adjacent to the first sidewall and a first portion of a second sidewall of the trench, the drift region having a first conductivity type;
- a drain region formed in the drift region, the drain region adjacent to a second portion of the second sidewall;
- a first gate region overlapping a portion of the drift region, the first gate region separate from the conductive spacer;
- and
- a non-conductive layer formed over the drift region and the dielectric material between the first gate region and the conductive spacer, the non-conductive layer overlapping a top portion of the first gate region.
A transistor comprising:
- a trench formed in a semiconductor substrate;
- a substantially vertical conductive spacer formed in the trench, the conductive spacer proximate to a first sidewall of the trench;
- a dielectric material formed in the trench, the dielectric material substantially surrounding the conductive spacer;
- a drift region formed in the semiconductor substrate adjacent to the first sidewall and a first portion of a second sidewall of the trench, the drift region having a first conductivity type;
- a drain region formed in the drift region, the drain region directly adjacent to a second portion of the second sidewall separate from and above the first portion of the second sidewall;
- a first gate region overlapping a portion of the drift region, the first gate region separate from the conductive spacer;
- and
- a non-conductive layer formed over the drift region and the dielectric material between the first gate region and the conductive spacer, the non-conductive layer overlapping a top portion of the first gate region.
Dependencies are inferred from the claim text.