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US 11,961,899 B2Granted
Semiconductor devices and methods of manufacturing thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Yao Lin, Hsiao Wen Lee, Yu-Shan Cheng, Chao-Cheng Chen
Life of this patent
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Abstract
A semiconductor device includes a gate structure extending along a first lateral direction. The semiconductor device includes a source/drain structure disposed on one side of the gate structure along a second lateral direction, the second lateral direction perpendicular to the first lateral direction. The semiconductor device includes an air gap disposed between the gate structure and the source/drain structure along the second lateral direction, wherein the air gap is disposed over the source/drain structure.
Claims20
A method for fabricating semiconductor devices, comprising:
- forming a channel structure over a substrate, wherein the channel structure extends along a first lateral direction;
- forming a gate structure extending along a second lateral direction and straddling a first portion of the channel structure;
- forming a first gate spacer next to the gate structure, wherein the first gate spacer has a first lateral portion and a first vertical portion;
- forming a second gate spacer over the first gate spacer, wherein the second gate spacer has a second lateral portion and a second vertical portion;
- forming a third gate spacer over the second gate spacer, wherein the third gate spacer has a third lateral portion and a third vertical portion;
- removing a second portion of the channel structure overlaid at least by the third lateral portion;
- growing an epitaxial structure at least from a remaining portion of the channel structure;
- and
- removing the second gate spacer to form an air gap, wherein the air gap is formed entirely above the epitaxial structure and vertically separated from the epitaxial structure by the first lateral portion of the first gate spacer.
6 more elements
A method for fabricating semiconductor devices, comprising:
- forming a channel structure protruding from a substrate, wherein the channel structure extends along a first lateral direction;
- forming a gate structure extending along a second lateral direction and straddling a first portion of the channel structure;
- forming a first gate spacer next to the gate structure, wherein the first gate spacer has a first vertical portion extending along a sidewall of the gate structure and a first lateral portion extending away from the sidewall;
- forming a second gate spacer over the first gate spacer, wherein the second gate spacer has a second lateral portion and a second vertical portion;
- forming a third gate spacer over the second gate spacer, wherein the third gate spacer has a third lateral portion and a third vertical portion;
- removing a second portion of the channel structure overlaid at least by the third lateral portion;
- growing an epitaxial structure at least from a remaining portion of the channel structure, wherein the epitaxial structure is disposed next to the second lateral portion along the first lateral direction;
- and
- removing the second gate spacer to form an air gap, wherein the air gap is formed entirely above the epitaxial structure and vertically separated from the epitaxial structure by the first lateral portion of the first gate spacer.
6 more elements
A method for fabricating semiconductor devices, comprising:
- forming a channel structure protruding from a substrate, wherein the channel structure comprises a plurality of nanostructures separated from one another along a vertical direction and extending along a first lateral direction;
- forming a gate structure extending along a second lateral direction and straddling a first portion of the channel structure;
- forming a first gate spacer next to the gate structure, wherein the first gate spacer has a first vertical portion extending along a sidewall of the gate structure and a first lateral portion extending away from the sidewall;
- forming a second gate spacer over the first gate spacer, wherein the second gate spacer has a second vertical portion extending along the first vertical portion and a second lateral portion overlaying the first lateral portion;
- forming a third gate spacer over the second gate spacer, wherein the third gate spacer has a third vertical portion extending along the second vertical portion and a third lateral portion overlaying the second lateral portion;
- removing a second portion of the channel structure overlaid at least by the third lateral portion;
- growing an epitaxial structure at least from a remaining portion of the channel structure, wherein the epitaxial structure is disposed next to the second lateral portion along the first lateral direction;
- and
- removing the second gate spacer to form an air gap, wherein the air gap is formed entirely above the epitaxial structure and vertically separated from the epitaxial structure by the first lateral portion of the first gate spacer.
6 more elements
Dependencies are inferred from the claim text.